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LV8417CS-TE-L-H

Onsemi

LV8417CS-TE-L-H by Onsemi

LV8417CS-TE-L-H by Onsemi is a Motion Control IC with 9 terminals, BICMOS technology, and 3.6V power supply. Its GRID ARRAY package style suits applications requiring precise motion control in a temperature range of -20 to 85 °C.

Median Price

$0.790

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Farnell

UK . 13,642 parts In-Stock

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Chip Stock

USA . 61,000 parts In-Stock

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Vyrian

USA . 12,246 parts In-Stock

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Digiode

USA . 2,439 parts In-Stock

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Sensible Micro Corp

USA . 658 parts In-Stock

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$1.172

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$1.089

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ACDS - Activité Composants Distribution Service

France . 100 parts In-Stock

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Corohmni

South Africa . 116 parts In-Stock

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AZTECH Wire

Italy . 831 parts In-Stock

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$16.120

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Perfect Parts

USA . 22,297 parts In-Stock

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GlobX GmbH

Germany . 12,500 parts In-Stock

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Kulean Microsystems

USA . 8,068 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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GreenTree Electronics

Israel . 4,854 parts In-Stock

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TANS Electronics

Latvia . 3,152 parts In-Stock

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Problanco Electronics

Mexico . 1,263 parts In-Stock

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Corphita

USA . 1,170 parts In-Stock

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SupplyDigital Components

Austria . 257 parts In-Stock

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UHIMA Technologies

Türkiye . 222 parts In-Stock

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Microchip USA

USA . 133 parts In-Stock

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Overview

Enhance your motion control applications with the LV8417CS-TE-L-H by Onsemi. Crafted with precision and quality, this innovative product offers unparalleled performance and reliability. Designed for efficiency and seamless integration, this motion control IC is a game-changer in the industry, providing customers with exceptional value and benefits. Trust Onsemi to deliver cutting-edge solutions that elevate your projects to new heights. Experience the difference with the LV8417CS-TE-L-H.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a cost-effective and durable housing for the motion control IC, ensuring long-term reliability.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and effort during production.

Power Supplies (V): 3,6

Supports a wide range of power supply voltages, offering flexibility in system design.

No. of Terminals: 9

Provides ample connectivity options for interfacing with other components in the system.

Package Style (Meter): GRID ARRAY, FINE PITCH

Enables high-density mounting on the PCB, optimizing space utilization.

Maximum Operating Temperature: 85 °C

Ensures reliable performance in a wide range of operating environments, enhancing product durability.

Minimum Operating Temperature: -20 °C

Allows for operation in harsh conditions or extreme temperatures, increasing the versatility of the product.

Terminal Finish: TIN SILVER COPPER

Provides excellent conductivity and corrosion resistance, ensuring reliable signal transmission.

Technology: BICMOS

Combines the advantages of both bipolar and CMOS technologies, offering high performance and low power consumption.

Terminal Pitch: 0.5 mm

Enables fine-pitch connections, promoting high-speed signaling and efficient data transmission.

Technical Specifications

Motion Control ICs LV8417CS-TE-L-H attributes and parameters. Explore more Motion Control ICs devices from Onsemi

Specs

JESD-30 Code:

S-PBGA-B9

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Terminals:

9

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA9,3X3,20

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3,6

Qualification:

Not Qualified

Sub-Category:

Motion Control Electronics

Maximum Supply Current (Isup):

.8 mA

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

LV8417CS-TE-L-H Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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