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LC72720YV-TLM-E

Onsemi

LC72720YV-TLM-E by Onsemi

LC72720YV-TLM-E by Onsemi is a telecom IC with 30 terminals in a small outline package. It operates b/w -40 to 85 °C, with a supply voltage of 3.3V. Ideal for telecom circuits, it has a peak reflow temp of 260°C and moisture sensitivity level of MSL4.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,383 parts In-Stock

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Digiode

USA . 1,458 parts In-Stock

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1,458

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Kulean Microsystems

USA . 4,237 parts In-Stock

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4,237

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SupplyDigital Components

Austria . 3,331 parts In-Stock

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Problanco Electronics

Mexico . 2,710 parts In-Stock

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TANS Electronics

Latvia . 1,143 parts In-Stock

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UHIMA Technologies

Türkiye . 564 parts In-Stock

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Corohmni

South Africa . 393 parts In-Stock

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Corphita

USA . 79 parts In-Stock

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Overview

Enhance your telecommunications projects with the LC72720YV-TLM-E by Onsemi. As a leader in the industry, Onsemi consistently delivers high-quality products that meet the demands of today's technology. This telecom interface IC offers seamless integration, reliable performance, and versatile applications. With its small outline package and industrial temperature grade, this product is perfect for a wide range of projects. Trust Onsemi to provide exceptional value and innovation with the LC72720YV-TLM-E.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this product lightweight and durable, ensuring reliable performance in various environments.

Surface Mount: YES

With surface mount capability, this product is easy to install and saves space on the circuit board, making it suitable for compact electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient utilization of space on the circuit board, enhancing overall design flexibility.

No. of Terminals: 30

Having 30 terminals provides ample connectivity options, allowing for versatile integration with other components in the telecom interface system.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C ensures reliable performance even in demanding thermal conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C allows for use in a wide range of environments, including extreme cold conditions.

Terminal Finish: TIN BISMUTH

The use of tin bismuth terminal finish enhances soldering performance and ensures stable electrical connections for long-term reliability.

Nominal Supply Voltage: 3.3 V

Operating at a nominal supply voltage of 3.3V, this telecom IC is compatible with standard power sources, making it easy to integrate into existing systems.

Technical Specifications

Other Function Telecom Interface ICs LC72720YV-TLM-E attributes and parameters. Explore more Other Function Telecom Interface ICs devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G30

JESD-609 Code:

e6

Length:

9.75 mm

Moisture Sensitivity Level (MSL):

4

No. of Functions:

1

No. of Terminals:

30

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.5 mm

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

TIN BISMUTH

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5.6 mm

Trade Compliance

LC72720YV-TLM-E Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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