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LB1980H-TRM-E

Onsemi

LB1980H-TRM-E by Onsemi

LB1980H-TRM-E by Onsemi is a Motion Control IC with 28 terminals, operating at -20 to 70 °C. It has power supplies of 5V and 15V, with a max supply current of 18mA. Ideal for applications requiring precise motion control in commercial-grade environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,691 parts In-Stock

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8,691

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Digiode

USA . 2,019 parts In-Stock

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2,019

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Distributors (Availability)

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AZTECH Wire

Italy . 590 parts In-Stock

1+ parts

$14.900

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590

$14.900

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TANS Electronics

Latvia . 5,975 parts In-Stock

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5,975

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Kulean Microsystems

USA . 3,952 parts In-Stock

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3,952

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SupplyDigital Components

Austria . 3,757 parts In-Stock

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3,757

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Problanco Electronics

Mexico . 2,267 parts In-Stock

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2,267

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Corphita

USA . 1,747 parts In-Stock

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1,747

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Microchip USA

USA . 311 parts In-Stock

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311

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Corohmni

South Africa . 116 parts In-Stock

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UHIMA Technologies

Türkiye . 37 parts In-Stock

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Overview

Enhance your motion control applications with the LB1980H-TRM-E by Onsemi. Crafted with precision and quality in mind, this innovative product offers seamless integration and superior performance. With Onsemi's reputation for excellence in manufacturing, customers can trust in the reliability and durability of this motion control IC. From robotics to automation, this product caters to a wide range of applications, providing unparalleled value and benefits to users. Experience the advantages of cutting-edge technology with the LB1980H-TRM-E by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials are durable and lightweight, making this product suitable for applications requiring a compact and reliable solution.

Surface Mount: YES

Surface mount technology allows for easy integration onto PCBs, saving space and simplifying assembly processes.

Power Supplies (V): 5,15

Offers flexibility in power supply options, allowing for compatibility with a wide range of systems and applications.

No. of Terminals: 28

The high number of terminals provides versatility in connecting to various external components and peripherals.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this product can reliably operate in harsh environments without risking damage or performance degradation.

Terminal Finish: TIN BISMUTH

Tin bismuth finish on terminals ensures good solderability and long-lasting connections, enhancing the overall reliability of the product.

Peak Reflow Temperature °C: 260

The high peak reflow temperature capability allows for robust soldering processes, ensuring strong and stable electrical connections.

Technology: BIPOLAR

Bipolar technology offers high precision and accuracy in control signals, making this product suitable for applications requiring fine motion control.

Moisture Sensitivity Level (MSL): 3

MSL level 3 indicates that this product is suitable for reflow soldering without requiring special handling, simplifying manufacturing processes.

Technical Specifications

Motion Control ICs LB1980H-TRM-E attributes and parameters. Explore more Motion Control ICs devices from Onsemi

Specs

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

28

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

PLASTIC/EPOXY

Package Equivalence Code:

SOP28/36,.4,32

Peak Reflow Temperature (C):

260

Power Supplies (V):

5,15

Qualification:

Not Qualified

Sub-Category:

Motion Control Electronics

Maximum Supply Current (Isup):

18 mA

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

LB1980H-TRM-E Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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