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LA4485

Onsemi

LA4485 by Onsemi

LA4485 by Onsemi is a 15W audio amplifier with 10% harmonic distortion, ideal for commercial applications. Featuring 2 channels and a gain of 51dB, it operates b/w -30 to 80 °C with power supplies ranging from 7.5V to 18V. Its rectangular package style and flange mount make it suitable for various audio and video amplification needs.

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Digiode

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ACDS - Activité Composants Distribution Service

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LittleDiode

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ComSIT Distribution GmbH

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Fibra_Brandt Electronic GMBH

Germany . 7 parts In-Stock

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Goldney Electronics S.L.

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MISTER SPROCKETS

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TANS Electronics

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Problanco Electronics

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Kulean Microsystems

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SupplyDigital Components

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UHIMA Technologies

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Overview

Elevate your audio experience with the LA4485 by Onsemi. Crafted by a trusted manufacturer, this audio amplifier offers unparalleled quality and performance. Perfect for a wide range of applications in the audio and video industry, this product provides clear and powerful sound output. With its 15W nominal output power and low harmonic distortion of 10%, the LA4485 delivers exceptional value to customers looking for top-notch audio amplification. Upgrade your sound system today with the LA4485 and enjoy high-quality audio like never before.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular package shape allows for easy integration into electronic devices

IC Type: AUDIO AMPLIFIER

Specifically designed for audio amplification, ensuring high-quality sound output

Harmonic Distortion: 10%

Low harmonic distortion ensures clear and accurate audio reproduction

Power Supplies (V): 13.2

Optimal power supply voltage supports efficient performance

No. of Terminals: 13

Sufficient number of terminals for versatile connectivity options

Nominal Output Power: 15 W

Provides high power output for loud and clear audio

Minimum Supply Voltage (Vsup): 7.5 V

Wide range of supply voltage options for flexibility in use

Maximum Operating Temperature: 80 °C

High operating temperature range for reliable performance in various environments

No. of Channels: 2

Supports stereo audio output for immersive sound experience

Technology: BIPOLAR

Bipolar technology ensures stable and precise amplification

Nominal Bandwidth: 0.02 kHz

Wide bandwidth for capturing and amplifying a wide range of audio frequencies

Maximum Supply Current: 160 mA

Efficient power consumption for longer battery life

Gain: 51 dB

High gain amplification for boosting audio signals without distortion

Technical Specifications

Audio & Video Amplifiers LA4485 attributes and parameters. Explore more Audio & Video Amplifiers devices from Onsemi

Specs

Nominal Bandwidth:

.02 kHz

General IC Type:

Gain:

51 dB

Harmonic Distortion:

10 %

JESD-30 Code:

R-XSFM-T13

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

13

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-30 Cel

Nominal Output Power:

15 W

Package Body Material:

UNSPECIFIED

Package Equivalence Code:

SIP13,.05,79

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Power Supplies (V):

13.2

Qualification:

Not Qualified

Sub-Category:

Audio/Video Amplifiers

Maximum Supply Current:

160 mA

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

7.5 V

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

SINGLE

Trade Compliance

LA4485 General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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