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LA4425AN-D-E

Onsemi

LA4425AN-D-E by Onsemi

LA4425AN-D-E by Onsemi is an audio amplifier IC with 6W output power, 10% harmonic distortion, and 45dB gain. It operates in industrial temperature range (-40 to 85 °C) with a supply voltage of 5-16V. Ideal for audio applications requiring high power amplification in a compact rectangular package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,799 parts In-Stock

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Digiode

USA . 2,440 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 1,115 parts In-Stock

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$17.520

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Component Stockers USA

USA . 302 parts In-Stock

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$99.990

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SupplyDigital Components

Austria . 6,516 parts In-Stock

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Kulean Microsystems

USA . 4,013 parts In-Stock

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Problanco Electronics

Mexico . 3,739 parts In-Stock

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TANS Electronics

Latvia . 3,117 parts In-Stock

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UHIMA Technologies

Türkiye . 627 parts In-Stock

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Corphita

USA . 432 parts In-Stock

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Corohmni

South Africa . 260 parts In-Stock

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Microchip USA

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Overview

Enhance your audio experience with the LA4425AN-D-E by Onsemi, a top-quality audio amplifier that delivers crystal-clear sound and powerful performance. Manufactured by Onsemi, a trusted name in the industry known for their cutting-edge technology and reliability, this product is perfect for a wide range of applications in audio and video systems. With its high-quality components and efficient design, the LA4425AN-D-E offers customers exceptional value, enhanced functionality, and unparalleled audio quality. Upgrade your audio setup today with the LA4425AN-D-E and enjoy a whole new level of audio excellence.

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient and space-saving installation in electronic devices.

General IC Type: AUDIO AMPLIFIER

Specifically designed for amplifying audio signals, ensuring high-quality sound output.

Harmonic Distortion: 10 %

Low distortion levels of 10% ensure clear and accurate audio reproduction with minimal interference.

Power Supplies (V): 13.2

Operating with a voltage of 13.2V provides sufficient power for the amplifier to deliver strong audio output.

No. of Terminals: 5

The presence of 5 terminals allows for easy connection and integration within a circuit or system.

Package Style (Meter): FLANGE MOUNT

The flange mount package style facilitates secure and stable mounting of the amplifier within a device.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, the amplifier can function reliably even under high heat conditions.

Minimum Operating Temperature: -40 °C

The amplifier can operate efficiently in cold temperatures as low as -40 °C, making it suitable for a wide range of environments.

Terminal Finish: Tin/Bismuth (Sn/Bi)

The tin/bismuth terminal finish ensures durable and reliable connections for stable performance.

Nominal Output Power: 6 W

Delivering a nominal output power of 6W, the amplifier can produce sufficient audio volume for various applications.

Minimum Supply Voltage (Vsup): 5 V

Operating with a minimum supply voltage of 5V ensures compatibility with different power sources and systems.

Temperature Grade: INDUSTRIAL

Designed for industrial applications, the amplifier is built to withstand harsh environments and conditions.

Nominal Bandwidth: 0.02 kHz

With a nominal bandwidth of 0.02kHz, the amplifier can accurately reproduce audio signals within the specified range.

Terminal Form: THROUGH-HOLE

The through-hole terminal form simplifies installation and soldering processes, making it user-friendly.

Maximum Supply Current: 130 mA

With a maximum supply current of 130mA, the amplifier operates efficiently while consuming minimal power.

Terminal Pitch: 1.98 mm

The 1.98mm terminal pitch allows for precise and secure connections, ensuring reliable performance.

Gain: 45 dB

With a gain of 45dB, the amplifier can boost the input audio signals to produce loud and clear output.

Maximum Supply Voltage (Vsup): 16 V

Having a maximum supply voltage of 16V provides flexibility and compatibility with a wide range of power sources.

Technical Specifications

Audio & Video Amplifiers LA4425AN-D-E attributes and parameters. Explore more Audio & Video Amplifiers devices from Onsemi

Specs

Nominal Bandwidth:

.02 kHz

General IC Type:

Gain:

45 dB

Harmonic Distortion:

10 %

JESD-30 Code:

R-XSFM-T5

JESD-609 Code:

e6

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Power:

6 W

Package Body Material:

UNSPECIFIED

Package Equivalence Code:

SIP5,.05,78

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Power Supplies (V):

13.2

Qualification:

Not Qualified

Sub-Category:

Audio/Video Amplifiers

Maximum Supply Current:

130 mA

Maximum Supply Voltage (Vsup):

16 V

Minimum Supply Voltage (Vsup):

5 V

Surface Mount:

NO

Temperature Grade:

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

Terminal Pitch:

1.98 mm

Terminal Position:

SINGLE

Trade Compliance

LA4425AN-D-E General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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