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LA4425A-MTK-E

Onsemi

LA4425A-MTK-E by Onsemi

LA4425A-MTK-E by Onsemi is an audio amplifier IC with 5 terminals and a power supply of 13.2V. It operates b/w -30 °C to 80°C, making it suitable for commercial extended temperature applications. The package body material is plastic/epoxy with terminal finish in tin bismuth, ideal for audio and video amplification needs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,070 parts In-Stock

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3,070

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Digiode

USA . 598 parts In-Stock

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598

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Distributors (Availability)

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AZTECH Wire

Italy . 306 parts In-Stock

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$11.540

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306

$11.540

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QUARKTWIN TECHNOLOGY LTD

USA . 10,246 parts In-Stock

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TANS Electronics

Latvia . 7,273 parts In-Stock

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Problanco Electronics

Mexico . 3,309 parts In-Stock

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Kulean Microsystems

USA . 2,848 parts In-Stock

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SupplyDigital Components

Austria . 1,912 parts In-Stock

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Corphita

USA . 1,545 parts In-Stock

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UHIMA Technologies

Türkiye . 501 parts In-Stock

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501

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Corohmni

South Africa . 286 parts In-Stock

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286

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Microchip USA

USA . 257 parts In-Stock

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257

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GreenTree Electronics

Israel . 50 parts In-Stock

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Perfect Parts

USA . 27 parts In-Stock

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Overview

Elevate your audio experience with the LA4425A-MTK-E by Onsemi. Crafted with precision and expertise, this audio amplifier delivers unmatched quality and performance. Whether you're a music enthusiast or a tech-savvy professional, this product offers versatile applications in various audio and video systems. With its reliable power supplies and durable construction, you can trust in its long-lasting durability. Upgrade your sound system today and immerse yourself in crystal-clear audio like never before with the LA4425A-MTK-E.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and lightweight design, making this amplifier easy to handle and transport.

General IC Type: AUDIO AMPLIFIER

Being an audio amplifier specifically designed for amplifying sound signals, it guarantees high-quality audio output for an immersive listening experience.

Power Supplies (V): 13.2

Having a power supply of 13.2V ensures a stable and consistent power source, resulting in reliable performance and uninterrupted sound amplification.

No. of Terminals: 5

With 5 terminals available, this amplifier provides ample connectivity options for various audio input and output devices, making it versatile and compatible with a wide range of equipment.

Maximum Operating Temperature: 80 °C

The high maximum operating temperature of 80 °C ensures that the amplifier can withstand heat and perform efficiently even under prolonged use or in hot environments.

Minimum Operating Temperature: -30 °C

The low minimum operating temperature of -30 °C allows the amplifier to function reliably in cold conditions, making it suitable for use in various environments and weather conditions.

Terminal Finish: TIN BISMUTH

The TIN BISMUTH terminal finish provides excellent conductivity and corrosion resistance, ensuring a stable connection and longevity of the amplifier.

Terminal Position: SINGLE

Having a single terminal position simplifies the installation process and eliminates the need for complex wiring configurations, making it user-friendly and easy to set up.

Temperature Grade: COMMERCIAL EXTENDED

The commercial extended temperature grade indicates that this amplifier is designed for commercial use with extended temperature range, ensuring reliable performance in various commercial settings.

Terminal Pitch: 1.98 mm

The terminal pitch of 1.98mm allows for precise and secure connections, minimizing the risk of signal interference or loss, and ensuring optimal audio amplification quality.

Technical Specifications

Audio & Video Amplifiers LA4425A-MTK-E attributes and parameters. Explore more Audio & Video Amplifiers devices from Onsemi

Specs

General IC Type:

JESD-609 Code:

e6

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

PLASTIC/EPOXY

Package Equivalence Code:

SIP5,.05,78

Power Supplies (V):

13.2

Qualification:

Not Qualified

Sub-Category:

Audio/Video Amplifiers

Surface Mount:

NO

Temperature Grade:

Terminal Finish:

TIN BISMUTH

Terminal Pitch:

1.98 mm

Terminal Position:

SINGLE

Trade Compliance

LA4425A-MTK-E General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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