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LA4425F-E

Onsemi

LA4425F-E by Onsemi

LA4425F-E by Onsemi is an audio amplifier IC with 5 terminals, operating at temperatures from -30 °C to 80°C. It has a power supply of 13.2V and uses TIN BISMUTH finish on its terminals. This IC is commonly used in commercial extended temperature grade applications for audio and video amplification.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,886 parts In-Stock

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Digiode

USA . 691 parts In-Stock

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AZTECH Wire

Italy . 295 parts In-Stock

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$22.160

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Kulean Microsystems

USA . 7,217 parts In-Stock

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SupplyDigital Components

Austria . 3,797 parts In-Stock

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Corphita

USA . 2,101 parts In-Stock

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Problanco Electronics

Mexico . 1,861 parts In-Stock

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TANS Electronics

Latvia . 1,028 parts In-Stock

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Microchip USA

USA . 401 parts In-Stock

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UHIMA Technologies

Türkiye . 336 parts In-Stock

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Corohmni

South Africa . 82 parts In-Stock

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Overview

Elevate your audio experience with the LA4425F-E by Onsemi, a top-of-the-line audio amplifier that guarantees unparalleled quality and performance. Crafted by the renowned manufacturer Onsemi, this product is designed to deliver crystal-clear sound in a compact and durable package. Ideal for various applications in the audio and video industry, this amplifier offers customers exceptional value, benefits, and advantages. Upgrade your audio setup today with the LA4425F-E and immerse yourself in a world of superior sound quality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the amplifier lightweight and durable, perfect for portability and long-term use.

General IC Type: AUDIO AMPLIFIER

Being specifically designed for audio amplification, this amplifier ensures high-quality sound reproduction and optimal performance for audio applications.

Power Supplies (V): 13.2

With a power supply of 13.2V, this amplifier can provide sufficient power to drive speakers and deliver clear, distortion-free audio output.

Maximum Operating Temperature: 80 °C

The high maximum operating temperature of 80 °C allows the amplifier to operate efficiently even in warmer environments, ensuring reliable performance under varying conditions.

Minimum Operating Temperature: -30 °C

The low minimum operating temperature of -30 °C enables the amplifier to function in cold temperatures without the risk of damage, making it versatile for use in different climates.

Terminal Finish: TIN BISMUTH

The use of tin bismuth terminal finish ensures good conductivity and resistance to corrosion, maintaining a stable connection for optimal signal transmission.

Terminal Position: SINGLE

Having a single terminal position simplifies installation and wiring, making it easier for users to set up and connect the amplifier efficiently.

Temperature Grade: COMMERCIAL EXTENDED

The commercial extended temperature grade allows the amplifier to operate within a wider temperature range, making it suitable for commercial applications that may require extended operating conditions.

Terminal Pitch: 1.98 mm

The terminal pitch of 1.98mm provides adequate spacing for easy soldering and assembly, ensuring proper connection and reducing the risk of short circuits.

Technical Specifications

Audio & Video Amplifiers LA4425F-E attributes and parameters. Explore more Audio & Video Amplifiers devices from Onsemi

Specs

General IC Type:

JESD-609 Code:

e6

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

PLASTIC/EPOXY

Package Equivalence Code:

SIP5,.05,78

Power Supplies (V):

13.2

Qualification:

Not Qualified

Sub-Category:

Audio/Video Amplifiers

Surface Mount:

NO

Temperature Grade:

Terminal Finish:

TIN BISMUTH

Terminal Pitch:

1.98 mm

Terminal Position:

SINGLE

Trade Compliance

LA4425F-E General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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