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TPA321DGNRG4

Texas Instruments

TPA321DGNRG4 by Texas Instruments

TPA321DGNRG4 by Texas Instruments is an audio amplifier with 0.5% harmonic distortion, 8 terminals, and 0.7W nominal output power. It operates b/w -40 to 85°C and has a supply voltage range of 2.5V to 5.5V. Ideal for industrial applications requiring small outline amplifiers with high-quality sound output.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,947 parts In-Stock

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4,947

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Digiode

USA . 3,230 parts In-Stock

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3,230

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

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One Stop Electronics

USA . 260 parts In-Stock

1+ parts

$2.800

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260

$2.800

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Parana Technologies

USA . 555 parts In-Stock

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$3.424

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$3.948

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555

$3.424

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$3.948

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DigiPath Technology Company

USA . 530 parts In-Stock

1+ parts

$3.770

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530

$3.770

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ChromeModa Solutions

Germany . 278 parts In-Stock

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$3.847

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$3.155

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278

$3.847

$3.155

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IDEA Electronic Components Group

UK . 15 parts In-Stock

1+ parts

$3.847

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$3.462

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15

$3.847

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$3.462

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Ampacity Inc.

Singapore . 383 parts In-Stock

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$14.800

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383

$14.800

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AZTECH Wire

Italy . 276 parts In-Stock

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$15.808

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$15.808

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A-Z Elektronik GmbH

Germany . 7,419 parts In-Stock

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Corphita

USA . 3,730 parts In-Stock

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Argo Parts USA

USA . 3,349 parts In-Stock

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3,349

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Continental Prestige Electronics

USA . 1,370 parts In-Stock

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1,370

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Bastille Electronics

Australia . 500 parts In-Stock

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Kepictronics

USA . 313 parts In-Stock

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313

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Overview

Experience superior audio quality and performance with the TPA321DGNRG4 audio amplifier by Texas Instruments. As a renowned manufacturer in the industry, Texas Instruments delivers top-notch products that guarantee reliability and innovation. Ideal for a wide range of applications in the audio and video amplification category, this amplifier offers customers exceptional value, benefits, and advantages. Upgrade your audio systems with the TPA321DGNRG4 and enjoy crystal clear sound with minimal distortion, making it the perfect choice for all your audio enhancement needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and protection for the amplifier, making it suitable for various applications.

Surface Mount: YES

Being surface mountable allows for easy installation and integration into electronic devices or circuit boards.

General IC Type: AUDIO AMPLIFIER

Specifically designed for audio amplification, ensuring high-quality sound output for audio applications.

Nominal Output Power: 0.7 W

With a nominal output power of 0.7W, this amplifier is able to deliver sufficient power for small to medium audio systems or devices.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the amplifier efficient and reliable.

Technical Specifications

Audio & Video Amplifiers TPA321DGNRG4 attributes and parameters. Explore more Audio & Video Amplifiers devices from Texas Instruments

Specs

Nominal Bandwidth:

.004 kHz

General IC Type:

Harmonic Distortion:

.5 %

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Power:

.7 W

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.19

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Audio/Video Amplifiers

Maximum Supply Current:

1.5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

TPA321DGNRG4 General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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