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FPF2C8P2NL07A

Onsemi

FPF2C8P2NL07A by Onsemi

FPF2C8P2NL07A by Onsemi is an N-CHANNEL IGBT with 12 elements, VCEsat of 2.3V, and IC of 50A. Ideal for POWER CONTROL applications, it has a toff of 263ns and ton of 115ns. Operating temperature ranges from -40°C to 150°C making it suitable for various power control systems.

Median Price

$70.290

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,470 parts In-Stock

1+ parts

-

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$70.290

1k+ parts

$62.890

10k+ parts

$59.190

1,470

-

$70.290

$62.890

$59.190

Verical

USA . 1,470 parts In-Stock

1+ parts

-

100+ parts

$87.862

1k+ parts

$78.612

10k+ parts

$73.987

1,470

-

$87.862

$78.612

$73.987

DigiKey

USA . 70 parts In-Stock

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70

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Arrow

USA . 35 parts In-Stock

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$13.340

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35

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$13.340

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Distributors (In-Stock)

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Vyrian

USA . 1,775 parts In-Stock

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$62.920

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$62.920

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Digiode

USA . 1,113 parts In-Stock

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$74.376

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$74.376

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DigiKey Marketplace

USA . 131 parts In-Stock

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131

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Distributors (Availability)

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Native Components

USA . 717 parts In-Stock

1+ parts

$0.124

100+ parts

-

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$0.119

717

$0.124

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$0.119

Northwest PG Solutions

USA . 606 parts In-Stock

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$0.136

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$0.120

606

$0.136

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$0.120

Corohmni

South Africa . 466 parts In-Stock

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$62.920

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466

$62.920

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Corphita

USA . 1,042 parts In-Stock

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$70.461

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Microchip USA

USA . 8,507 parts In-Stock

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$172.868

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TANS Electronics

Latvia . 4,534 parts In-Stock

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Authorized Procurement Solutions

USA . 4,500 parts In-Stock

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SupplyDigital Components

Austria . 3,467 parts In-Stock

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Kulean Microsystems

USA . 3,102 parts In-Stock

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Problanco Electronics

Mexico . 1,705 parts In-Stock

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Supply Digital

USA . 1,240 parts In-Stock

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UHIMA Technologies

Türkiye . 485 parts In-Stock

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Overview

Unleash the power of innovation with the FPF2C8P2NL07A by Onsemi, a top-tier manufacturer known for its superior quality and cutting-edge technology. As a part of the Insulated Gate Bipolar Transistors (IGBT) category, this N-CHANNEL transistor offers complex configuration for optimal performance in power control applications. With a maximum VCEsat of 2.3V and a maximum collector-emitter voltage of 650V, this product delivers unrivaled efficiency and reliability. Elevate your projects to new heights with the FPF2C8P2NL07A and experience the value, benefits, and advantages it brings to your designs.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower conduction losses and higher efficiency compared to P-channel IGBTs, making them a good choice for power control applications.

Maximum VCEsat: 2.3 V

Low VCEsat means lower voltage drop when the transistor is conducting, leading to reduced power losses and improved efficiency in power control applications.

Maximum Power Dissipation (Abs): 174 W

High power dissipation capability allows the transistor to handle large amounts of power efficiently, making it suitable for high-power applications.

Maximum Collector-Emitter Voltage: 650 V

The high maximum collector-emitter voltage rating makes the transistor suitable for high voltage applications such as power control and inverters.

Maximum Collector Current (IC): 50 A

High collector current rating allows the transistor to handle larger currents, making it suitable for high-power applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, the transistor can operate in harsh environments without overheating, ensuring reliable performance.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FPF2C8P2NL07A attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.7 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X34

No. of Elements:

12

No. of Terminals:

34

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

263 ns

Nominal Turn On Time (ton):

115 ns

Maximum VCEsat:

2.3 V

Trade Compliance

FPF2C8P2NL07A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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