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FDP24N40

Onsemi

FDP24N40 by Onsemi

FDP24N40 by Onsemi is a N-CHANNEL Power FET with 400V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 96A and EAS of 1296mJ, making it suitable for high-power operations. With a max ID of 24A and 0.175 ohm RDS(on), this ENHANCEMENT MODE transistor offers efficient performance in various electronic systems.

Median Price

$3.060

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

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Arrow

USA . 495 parts In-Stock

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$3.060

100+ parts

$2.220

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$1.570

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495

$3.060

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$1.570

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Verical

USA . 495 parts In-Stock

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$3.060

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$2.220

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$1.570

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495

$3.060

$2.220

$1.570

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Nova Conductors

Japan . 50 parts In-Stock

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$1.879

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$1.879

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Digiode

USA . 1,173 parts In-Stock

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$2.907

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Vyrian

USA . 6,707 parts In-Stock

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Chip Stock

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Cyclops Electronics Ltd

UK . 2,500 parts In-Stock

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Flip Electronics

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J2 Sourcing AB

Sweden . 570 parts In-Stock

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Sunrise Surplus Inc.

USA . 82 parts In-Stock

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LittleDiode

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Component Stockers USA

USA . 4,217 parts In-Stock

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$1.100

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$1.050

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$1.020

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Aztec Data Supply Inc.

USA . 1,817 parts In-Stock

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$1.278

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$1.278

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Advanced Electronics

New Zealand . 60 parts In-Stock

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$1.454

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$1.323

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$1.192

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60

$1.454

$1.323

$1.192

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Corohmni

South Africa . 594 parts In-Stock

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$1.534

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Continental Prestige Electronics

USA . 3,102 parts In-Stock

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$1.719

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$1.685

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$1.719

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Argo Parts USA

USA . 2,579 parts In-Stock

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$1.719

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Semicontronic

India . 358 parts In-Stock

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$2.600

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$2.535

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$2.522

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Ampacity Inc.

Singapore . 315 parts In-Stock

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$2.600

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Corphita

USA . 926 parts In-Stock

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$2.754

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AZTECH Wire

Italy . 550 parts In-Stock

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$19.381

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Microchip USA

USA . 6,266 parts In-Stock

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Perfect Parts

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Metaverse IC Inc.

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QUARKTWIN TECHNOLOGY LTD

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Problanco Electronics

Mexico . 4,373 parts In-Stock

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Supply Digital

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SupplyDigital Components

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Kulean Microsystems

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Kepictronics

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Lixinc

USA . 983 parts In-Stock

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TANS Electronics

Latvia . 898 parts In-Stock

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UHIMA Technologies

Türkiye . 628 parts In-Stock

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iodParts Technologies Inc.

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Overview

Unlock the power of efficiency and reliability with the Onsemi FDP24N40 Power Field Effect Transistor. Manufactured by Onsemi, a trusted name in semiconductor technology, this N-Channel transistor is ideal for switching applications. With a maximum drain current of 24A and a minimum breakdown voltage of 400V, this transistor offers exceptional performance and durability. Whether you're looking to optimize your power control systems or enhance your electronic designs, the FDP24N40 delivers value, benefits, and advantages that will exceed your expectations. Upgrade to Onsemi today and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material choice provides durability and protection for the internal components, ensuring long-term reliability.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance characteristics compared to P-channel FETs, making this product a suitable choice for various applications.

Minimum DS Breakdown Voltage: 400 V

The high breakdown voltage allows this FET to handle higher voltages, making it suitable for applications where a robust transistor is required.

Maximum Pulsed Drain Current (IDM): 96 A

The high pulsed drain current rating indicates that this FET can handle high current spikes without getting damaged, making it suitable for applications with varying load conditions.

Avalanche Energy Rating (EAS): 1296 mJ

The high avalanche energy rating indicates that this FET can withstand energy transients without failure, enhancing its ruggedness and reliability.

Maximum Power Dissipation (Abs): 227 W

With a high power dissipation rating, this FET can handle high power levels without overheating, ensuring reliable performance under demanding conditions.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this FET to operate in high-temperature environments without performance degradation, making it suitable for industrial applications.

Technical Specifications

Power Field Effect Transistors (FET) FDP24N40 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

1296 mJ

Minimum DS Breakdown Voltage:

400 V

Maximum Drain Current (Abs) (ID):

24 A

Maximum Drain Current (ID):

24 A

Maximum Drain-Source On Resistance:

.175 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

96 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDP24N40 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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