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FDP20N50

Onsemi

FDP20N50 by Onsemi

FDP20N50 by Onsemi is a Power FET with 500V DS Breakdown Voltage, 80A IDM, and 0.23 ohm RDS(on). Ideal for switching applications, it features N-CHANNEL polarity, SINGLE configuration with built-in diode. Operating in enhancement mode at up to 150°C, it has a max power dissipation of 250W.

Median Price

$3.588

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2,000 parts In-Stock

1+ parts

$3.588

100+ parts

$2.750

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2,000

$3.588

$2.750

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Verical

USA . 2,000 parts In-Stock

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$3.588

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$2.750

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2,000

$3.588

$2.750

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DigiKey

USA . 104,500 parts In-Stock

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$1.450

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104,500

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$1.450

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Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

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$1.924

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100

$1.924

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TME

Poland . 79 parts In-Stock

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$2.270

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$1.630

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79

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$1.630

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Digiode

USA . 2,180 parts In-Stock

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$3.409

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Flip Electronics

USA . 104,500 parts In-Stock

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104,500

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Vyrian

USA . 1,986 parts In-Stock

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Chip Stock

USA . 279 parts In-Stock

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279

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ComSIT Distribution GmbH

Germany . 50 parts In-Stock

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50

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Bristol Electronics

USA . 20 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,156 parts In-Stock

1+ parts

$1.355

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2,156

$1.355

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Corohmni

South Africa . 252 parts In-Stock

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$1.886

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252

$1.886

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Argo Parts USA

USA . 666 parts In-Stock

1+ parts

$1.924

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666

$1.924

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Netroflash

USA . 500 parts In-Stock

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$1.924

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500

$1.924

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Advanced Electronics

New Zealand . 900 parts In-Stock

1+ parts

$1.962

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$1.962

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$1.962

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900

$1.962

$1.962

$1.962

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Continental Prestige Electronics

USA . 974 parts In-Stock

1+ parts

$2.630

100+ parts

$2.050

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974

$2.630

$2.050

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Semicontronic

India . 1,919 parts In-Stock

1+ parts

$3.050

100+ parts

$2.974

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$2.958

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1,919

$3.050

$2.974

$2.958

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Ampacity Inc.

Singapore . 1,914 parts In-Stock

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$3.050

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$3.050

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Corphita

USA . 2,747 parts In-Stock

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$3.229

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$3.229

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Metaverse IC Inc.

Canada . 50,000 parts In-Stock

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RC Electronics

USA . 39,912 parts In-Stock

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$1.960

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$1.790

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$1.740

39,912

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$1.790

$1.740

Perfect Parts

USA . 24,087 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 9,005 parts In-Stock

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Kulean Microsystems

USA . 5,652 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,250 parts In-Stock

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Problanco Electronics

Mexico . 3,841 parts In-Stock

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TANS Electronics

Latvia . 3,049 parts In-Stock

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Kepictronics

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Lixinc

USA . 804 parts In-Stock

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SupplyDigital Components

Austria . 664 parts In-Stock

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664

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UHIMA Technologies

Türkiye . 460 parts In-Stock

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iodParts Technologies Inc.

India . 350 parts In-Stock

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Supply Digital

USA . 189 parts In-Stock

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Overview

Unlock the power of efficient switching with the FDP20N50 by Onsemi. Manufactured with precision and expertise, this N-channel power FET offers reliable performance in various applications. From enhancing energy efficiency to maximizing power distribution, this transistor provides value and benefits that cater to the needs of customers. Experience superior quality and performance with the FDP20N50, a smart choice for your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and thermal stability, making the transistor suitable for a wide range of operating conditions.

Minimum DS Breakdown Voltage: 500 V

With a high breakdown voltage, this FET can handle high voltages, making it suitable for applications where voltage spikes may occur.

Maximum Pulsed Drain Current (IDM): 80 A

The high pulsed drain current rating allows the transistor to handle sudden spikes in current, making it reliable for switching applications.

Maximum Power Dissipation (Abs): 250 W

The high power dissipation capability ensures that the transistor can handle high power levels without overheating, making it suitable for demanding applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this FET can operate in a wide range of temperature environments, increasing its versatility.

Technical Specifications

Power Field Effect Transistors (FET) FDP20N50 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

1110 mJ

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (Abs) (ID):

20 A

Maximum Drain Current (ID):

20 A

Maximum Drain-Source On Resistance:

.23 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

80 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDP20N50 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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