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ESD8106MUTAG

Onsemi

ESD8106MUTAG by Onsemi

ESD8106MUTAG by Onsemi is a transient suppression device with 6 common anode elements. It has a breakdown voltage of 5V, reverse current of 1uA, and operates b/w -55 to 125°C. Ideal for protecting electronic circuits from ESD events as per IEC-61000-4-2 standard.

Median Price

$0.173

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2,531 parts In-Stock

1+ parts

$0.102

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2,531

$0.102

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Rochester

USA . 5,164,376 parts In-Stock

1+ parts

-

100+ parts

$0.187

1k+ parts

$0.155

10k+ parts

$0.138

5,164,376

-

$0.187

$0.155

$0.138

Farnell

UK . 5,131,376 parts In-Stock

1+ parts

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100+ parts

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$0.194

5,131,376

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$0.194

Verical

USA . 4,143,000 parts In-Stock

1+ parts

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$0.173

4,143,000

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$0.173

DigiKey

USA . 32,899 parts In-Stock

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$0.080

32,899

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$0.080

Flip Electronics (Authorized)

USA . 32,899 parts In-Stock

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32,899

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Chip1Stop

Japan . 2,643 parts In-Stock

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Digiode

USA . 2,038 parts In-Stock

1+ parts

$0.097

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2,038

$0.097

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Vyrian

USA . 538 parts In-Stock

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$0.102

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538

$0.102

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Flip Electronics

USA . 32,899 parts In-Stock

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32,899

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Chip Stock

USA . 28,000 parts In-Stock

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Bristol Electronics

USA . 2,295 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 567 parts In-Stock

1+ parts

$0.092

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567

$0.092

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Corohmni

South Africa . 337 parts In-Stock

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$0.102

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337

$0.102

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Continental Prestige Electronics

USA . 5,134,376 parts In-Stock

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$0.231

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5,134,376

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$0.231

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Perfect Parts

USA . 10,080 parts In-Stock

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10,080

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Problanco Electronics

Mexico . 8,338 parts In-Stock

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Kulean Microsystems

USA . 4,942 parts In-Stock

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Authorized Procurement Solutions

USA . 4,500 parts In-Stock

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TANS Electronics

Latvia . 3,566 parts In-Stock

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Northwest PG Solutions

USA . 2,054 parts In-Stock

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Native Components

USA . 547 parts In-Stock

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SupplyDigital Components

Austria . 349 parts In-Stock

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349

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UHIMA Technologies

Türkiye . 242 parts In-Stock

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Overview

Protect your valuable electronic devices with the ESD8106MUTAG transient suppression device from Onsemi. Designed for reliable performance and durability, this common anode diode offers superior protection against voltage spikes and surges. Ideal for a wide range of applications, this small outline package is easy to install and ensures peace of mind for customers. Trust in Onsemi's expertise and quality to safeguard your electronics from potential damage. Choose the ESD8106MUTAG for unmatched reliability and protection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the product.

Config: COMMON ANODE, 6 ELEMENTS

Common anode configuration with 6 elements provides efficient protection against transient surges.

Nominal Breakdown Voltage: 5 V

The nominal breakdown voltage of 5 V indicates the level at which the device will start conducting and redirecting excess voltage.

Maximum Reverse Current: 1 uA

Low maximum reverse current ensures minimal power dissipation and efficient protection of electronic circuits.

Maximum Operating Temperature: 125 °C

High maximum operating temperature makes this device suitable for a wide range of applications.

Reference Standard: IEC-61000-4-2

Compliance with IEC standard ensures quality and reliability of the product in protecting against electrostatic discharge.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of transient voltage suppressor diodes provides fast response and efficient suppression of voltage spikes.

Technical Specifications

Transient Suppression Devices ESD8106MUTAG attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

ULTRA LOW CAPACITANCE

Minimum Breakdown Voltage:

4 V

Nominal Breakdown Voltage:

5 V

Config:

COMMON ANODE, 6 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-N14

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

6

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

3.3 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

3.3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

ESD8106MUTAG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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