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ESD8011MUT5G

Onsemi

ESD8011MUT5G by Onsemi

ESD8011MUT5G by Onsemi is a single bidirectional Trans Voltage Suppressor Diode with 5.5V max repetitive peak reverse voltage and 19V clamping voltage. It operates b/w -55°C to 125°C, ideal for transient suppression in electronic circuits. Package style is chip carrier, suitable for surface mount applications.

Median Price

$0.169

Lifecycle Status

Suppliers In-Stock

27

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 2,082 parts In-Stock

1+ parts

$0.258

100+ parts

$0.112

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$0.094

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2,082

$0.258

$0.112

$0.094

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Mouser Electronics

USA . 41,883 parts In-Stock

1+ parts

$0.500

100+ parts

$0.194

1k+ parts

$0.126

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$0.100

41,883

$0.500

$0.194

$0.126

$0.100

Newark

USA . 108,260 parts In-Stock

1+ parts

$0.515

100+ parts

$0.199

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$0.133

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108,260

$0.515

$0.199

$0.133

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DigiKey

USA . 265,802 parts In-Stock

1+ parts

$0.540

100+ parts

$0.209

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$0.140

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$0.110

265,802

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$0.209

$0.140

$0.110

Flip Electronics (Authorized)

USA . 1,256,645 parts In-Stock

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Rochester

USA . 252,303 parts In-Stock

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$0.102

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$0.085

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$0.075

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$0.102

$0.085

$0.075

Verical

USA . 184,544 parts In-Stock

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Master Electronics

USA . 49,177 parts In-Stock

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$0.162

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Avnet

USA . 30,000 parts In-Stock

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Farnell

UK . 18,695 parts In-Stock

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$0.103

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$0.081

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$0.079

18,695

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$0.103

$0.081

$0.079

Element14

Singapore . 18,695 parts In-Stock

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100+ parts

$0.176

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$0.139

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$0.137

18,695

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$0.139

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Arrow

USA . 10,000 parts In-Stock

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$0.076

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Distributors (In-Stock)

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Digiode

USA . 1,987 parts In-Stock

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$0.079

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Nova Conductors

Japan . 51 parts In-Stock

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$0.105

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$0.105

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Maritex

Poland . 3,525 parts In-Stock

1+ parts

$0.144

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$0.079

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$0.075

10k+ parts

$0.066

3,525

$0.144

$0.079

$0.075

$0.066

TME

Poland . 9,480 parts In-Stock

1+ parts

$0.260

100+ parts

$0.149

1k+ parts

$0.115

10k+ parts

$0.099

9,480

$0.260

$0.149

$0.115

$0.099

Flip Electronics

USA . 341,533 parts In-Stock

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Vyrian

USA . 146,336 parts In-Stock

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NAC Semi

USA . 60,000 parts In-Stock

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Chip Stock

USA . 42,000 parts In-Stock

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IBS Electronics

USA . 30,000 parts In-Stock

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$0.095

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Sensible Micro Corp

USA . 16,244 parts In-Stock

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Cyclops Electronics Ltd

UK . 3,000 parts In-Stock

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SPM Sales

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PC Components Company LLC

USA . 90 parts In-Stock

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Bristol Electronics

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Prism Electronics

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Distributors (Availability)

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Ampacity Inc.

Singapore . 146,587 parts In-Stock

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$0.067

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Corphita

USA . 1,635 parts In-Stock

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Corohmni

South Africa . 453 parts In-Stock

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$0.079

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453

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Continental Prestige Electronics

USA . 44,460 parts In-Stock

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$0.275

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$0.152

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$0.072

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Perfect Parts

USA . 264,718 parts In-Stock

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RC Electronics

USA . 67,958 parts In-Stock

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$0.120

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Futuretech Components

Singapore . 18,323 parts In-Stock

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Lixinc

USA . 11,731 parts In-Stock

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Assy Fe

Spain . 8,885 parts In-Stock

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Kepictronics

USA . 5,000 parts In-Stock

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Problanco Electronics

Mexico . 4,644 parts In-Stock

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 2,000 parts In-Stock

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SupplyDigital Components

Austria . 1,919 parts In-Stock

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TANS Electronics

Latvia . 1,904 parts In-Stock

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GreenTree Electronics

Israel . 1,110 parts In-Stock

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Authorized Procurement Solutions

USA . 1,010 parts In-Stock

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UHIMA Technologies

Türkiye . 707 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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Kulean Microsystems

USA . 57 parts In-Stock

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Overview

Enhance your electronic devices with the ESD8011MUT5G by Onsemi, a top-quality transient suppression device designed to protect your valuable equipment from voltage spikes and surges. Manufactured by the trusted brand Onsemi, this product offers reliable performance and durability. Ideal for a wide range of applications, this single-config chip carrier is easy to install and provides bidirectional protection with a maximum clamping voltage of 19V. Invest in the ESD8011MUT5G today and enjoy peace of mind knowing your electronics are safeguarded against potential damage.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transient suppression device, making it suitable for a wide range of applications.

Config: SINGLE

The single configuration simplifies installation and maintenance of the transient suppression device, reducing complexity for users.

Maximum Non Repetitive Peak Reverse Power Dissipation: 34 W

The high power dissipation capacity of 34W ensures the transient suppression device can handle surges and protect the connected equipment effectively.

Nominal Breakdown Voltage: 7.3 V

The nominal breakdown voltage of 7.3V ensures reliable protection against voltage spikes, safeguarding sensitive electronics.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C allows the transient suppression device to operate in harsh environments without performance degradation.

Technical Specifications

Transient Suppression Devices ESD8011MUT5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

ULTRA LOW CAPACITANCE

Minimum Breakdown Voltage:

6.5 V

Nominal Breakdown Voltage:

7.3 V

Maximum Clamping Voltage:

19 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

34 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

BIDIRECTIONAL

Maximum Repetitive Peak Reverse Voltage:

5.5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

ESD8011MUT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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