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ESD8351MUT5G

Onsemi

ESD8351MUT5G by Onsemi

ESD8351MUT5G by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 7V breakdown voltage, 0.5uA reverse current, and 11.2V clamping voltage. It is used for transient suppression in electronics to protect against ESD events.

Median Price

$0.420

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 10,318 parts In-Stock

1+ parts

$0.420

100+ parts

$0.164

1k+ parts

$0.109

10k+ parts

$0.078

10,318

$0.420

$0.164

$0.109

$0.078

Mouser Electronics

USA . 8,096 parts In-Stock

1+ parts

$0.420

100+ parts

$0.164

1k+ parts

$0.098

10k+ parts

$0.077

8,096

$0.420

$0.164

$0.098

$0.077

Chip1Stop

Japan . 13,516 parts In-Stock

1+ parts

$1.300

100+ parts

$0.268

1k+ parts

$0.169

10k+ parts

-

13,516

$1.300

$0.268

$0.169

-

Flip Electronics (Authorized)

USA . 842,165 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

842,165

-

-

-

-

Rochester

USA . 466,706 parts In-Stock

1+ parts

-

100+ parts

$0.082

1k+ parts

$0.068

10k+ parts

$0.060

466,706

-

$0.082

$0.068

$0.060

Verical

USA . 449,750 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.075

449,750

-

-

-

$0.075

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DF Sales Co.

USA . 9,500 parts In-Stock

1+ parts

$0.040

100+ parts

-

1k+ parts

-

10k+ parts

-

9,500

$0.040

-

-

-

DF Sales Co.

USA . 9,500 parts In-Stock

1+ parts

$0.040

100+ parts

-

1k+ parts

-

10k+ parts

-

9,500

$0.040

-

-

-

Digiode

USA . 1,686 parts In-Stock

1+ parts

$0.064

100+ parts

-

1k+ parts

-

10k+ parts

-

1,686

$0.064

-

-

-

Nova Conductors

Japan . 450 parts In-Stock

1+ parts

$0.133

100+ parts

-

1k+ parts

-

10k+ parts

-

450

$0.133

-

-

-

Flip Electronics

USA . 1,002,165 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,002,165

-

-

-

-

Vyrian

USA . 265,393 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

265,393

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 315 parts In-Stock

1+ parts

$0.040

100+ parts

-

1k+ parts

-

10k+ parts

-

315

$0.040

-

-

-

Ampacity Inc.

Singapore . 265,548 parts In-Stock

1+ parts

$0.057

100+ parts

-

1k+ parts

-

10k+ parts

-

265,548

$0.057

-

-

-

Corphita

USA . 96 parts In-Stock

1+ parts

$0.060

100+ parts

-

1k+ parts

-

10k+ parts

-

96

$0.060

-

-

-

Aranea Global

USA . 50 parts In-Stock

1+ parts

$0.130

100+ parts

-

1k+ parts

$0.125

10k+ parts

-

50

$0.130

-

$0.125

-

iodParts Technologies Inc.

India . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20,000

-

-

-

-

Kulean Microsystems

USA . 6,736 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,736

-

-

-

-

Problanco Electronics

Mexico . 6,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,600

-

-

-

-

TANS Electronics

Latvia . 1,588 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,588

-

-

-

-

SupplyDigital Components

Austria . 295 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

295

-

-

-

-

UHIMA Technologies

Türkiye . 201 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

201

-

-

-

-

Overview

Looking for reliable transient suppression devices? Look no further than the ESD8351MUT5G by Onsemi. With a reputation for quality and innovation, Onsemi delivers top-notch products that exceed industry standards. The ESD8351MUT5G is perfect for applications requiring protection against voltage spikes, ensuring your electronics stay safe and functional. Trust Onsemi to provide the value, benefits, and advantages you need for peace of mind in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection, making the device durable and reliable.

Nominal Breakdown Voltage: 7 V

The high breakdown voltage ensures effective suppression of transient voltage spikes and surges.

Maximum Reverse Current: 0.5 uA

Low reverse current ensures minimal power loss and efficient operation.

Maximum Operating Temperature: 125 °C

The device can operate in high-temperature environments without compromising performance.

Reference Standard: IEC-61000-4-2

Compliance with this standard ensures that the device meets international quality and safety requirements.

Technical Specifications

Transient Suppression Devices ESD8351MUT5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

ULTRA LOW CAPACITANCE

Maximum Breakdown Voltage:

7.8 V

Minimum Breakdown Voltage:

5.5 V

Nominal Breakdown Voltage:

7 V

Maximum Clamping Voltage:

11.2 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

3.3 V

Maximum Reverse Current:

.5 uA

Reverse Test Voltage:

3.3 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

ESD8351MUT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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