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ESD8016MUTAG

Onsemi

ESD8016MUTAG by Onsemi

ESD8016MUTAG by Onsemi is a transient suppression device with 6 common anode elements. It has a breakdown voltage of 7V and max clamping voltage of 8.4V, suitable for protecting electronic circuits from ESD events. With a package style of small outline and surface mount capability, it operates b/w -55°C to 125°C as per IEC-61000-4-2 standard.

Median Price

$0.225

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,247,230 parts In-Stock

1+ parts

-

100+ parts

$0.225

1k+ parts

$0.186

10k+ parts

$0.166

1,247,230

-

$0.225

$0.186

$0.166

DigiKey

USA . 1,247,230 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.280

1,247,230

-

-

-

$0.280

Verical

USA . 912,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.208

912,000

-

-

-

$0.208

Flip Electronics (Authorized)

USA . 83,523 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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83,523

-

-

-

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,053 parts In-Stock

1+ parts

$0.175

100+ parts

-

1k+ parts

-

10k+ parts

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2,053

$0.175

-

-

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Vyrian

USA . 1,086 parts In-Stock

1+ parts

$0.184

100+ parts

-

1k+ parts

-

10k+ parts

-

1,086

$0.184

-

-

-

DigiKey Marketplace

USA . 1,247,230 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.190

10k+ parts

-

1,247,230

-

-

$0.190

-

Flip Electronics

USA . 83,523 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

83,523

-

-

-

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Chip Stock

USA . 36,000 parts In-Stock

1+ parts

-

100+ parts

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36,000

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 179 parts In-Stock

1+ parts

$0.166

100+ parts

-

1k+ parts

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179

$0.166

-

-

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Corohmni

South Africa . 111 parts In-Stock

1+ parts

$0.192

100+ parts

-

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10k+ parts

-

111

$0.192

-

-

-

Advanced Electronics

New Zealand . 70 parts In-Stock

1+ parts

$0.203

100+ parts

$0.185

1k+ parts

$0.166

10k+ parts

-

70

$0.203

$0.185

$0.166

-

Native Components

USA . 496 parts In-Stock

1+ parts

$1.340

100+ parts

-

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496

$1.340

-

-

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Northwest PG Solutions

USA . 791 parts In-Stock

1+ parts

$1.474

100+ parts

-

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10k+ parts

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791

$1.474

-

-

-

Continental Prestige Electronics

USA . 1,247,230 parts In-Stock

1+ parts

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100+ parts

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$0.221

10k+ parts

-

1,247,230

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$0.221

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QUARKTWIN TECHNOLOGY LTD

USA . 26,427 parts In-Stock

1+ parts

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26,427

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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20,000

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Kepictronics

USA . 14,286 parts In-Stock

1+ parts

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14,286

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Kulean Microsystems

USA . 6,878 parts In-Stock

1+ parts

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6,878

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SupplyDigital Components

Austria . 6,726 parts In-Stock

1+ parts

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6,726

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Problanco Electronics

Mexico . 6,650 parts In-Stock

1+ parts

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6,650

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TANS Electronics

Latvia . 4,106 parts In-Stock

1+ parts

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4,106

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UHIMA Technologies

Türkiye . 361 parts In-Stock

1+ parts

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361

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Overview

Experience superior protection against electrical transients with the ESD8016MUTAG by Onsemi. As a leading manufacturer in transient suppression devices, Onsemi delivers top-notch quality and reliability. This common anode, six-element device is designed for a wide range of applications, providing customers with peace of mind knowing their electronics are safeguarded. With a nominal breakdown voltage of 7V and maximum clamping voltage of 8.4V, this product offers exceptional value and performance. Trust Onsemi to keep your electronics safe from surge damage.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the components inside, making the product reliable for long-term use.

Nominal Breakdown Voltage: 7 V

The high breakdown voltage ensures that the device can effectively suppress transient voltage spikes and protect sensitive electronics in the circuit.

Maximum Reverse Current: 1 uA

With low reverse current, the device minimizes power loss and heat dissipation, increasing efficiency and reliability.

Maximum Operating Temperature: 125 °C

The high operating temperature range allows the device to function in challenging environmental conditions without performance degradation.

Minimum Operating Temperature: -55 °C

The low operating temperature ensures that the device can also operate in extreme cold conditions, making it versatile for various applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of Transient Voltage Suppressor diode ensures fast response time and effective suppression of voltage spikes, providing reliable protection for the circuit.

Reference Standard: IEC-61000-4-2

Compliance with this industry standard ensures that the device meets quality and performance requirements, making it a trusted choice for applications where reliability is crucial.

Technical Specifications

Transient Suppression Devices ESD8016MUTAG attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Minimum Breakdown Voltage:

5.5 V

Nominal Breakdown Voltage:

7 V

Maximum Clamping Voltage:

8.4 V

Config:

COMMON ANODE, 6 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

6

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

3.3 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

3.3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

ESD8016MUTAG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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