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ESD8351N2T5G

Onsemi

ESD8351N2T5G by Onsemi

ESD8351N2T5G by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 7.8V max breakdown voltage, ideal for transient suppression applications. It operates b/w -55 to 125 °C and complies with IEC-61000-4-2, 4-5 standards. This chip carrier package has nickel palladium gold finish and avalanche technology for efficient protection.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,560 parts In-Stock

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Vyrian

USA . 820 parts In-Stock

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820

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Distributors (Availability)

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Native Components

USA . 991 parts In-Stock

1+ parts

$5.006

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991

$5.006

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TANS Electronics

Latvia . 8,181 parts In-Stock

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SupplyDigital Components

Austria . 4,930 parts In-Stock

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Problanco Electronics

Mexico . 1,572 parts In-Stock

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Corphita

USA . 1,328 parts In-Stock

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Northwest PG Solutions

USA . 604 parts In-Stock

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$4.906

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Kulean Microsystems

USA . 294 parts In-Stock

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Corohmni

South Africa . 98 parts In-Stock

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UHIMA Technologies

Türkiye . 25 parts In-Stock

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Overview

Enhance your electronic systems with the ESD8351N2T5G by Onsemi, a top-of-the-line transient suppression device that guarantees superior quality and reliability. Manufactured by industry leader Onsemi, this product offers unmatched protection against voltage spikes and surges, ensuring the longevity of your devices. Ideal for a wide range of applications, this chip carrier-style device is a must-have for any electronics enthusiast looking to safeguard their equipment. Trust in Onsemi's expertise and invest in the ESD8351N2T5G for peace of mind and uninterrupted performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good protection and durability for the device.

Config: SINGLE

SINGLE configuration simplifies installation and reduces complexity.

Surface Mount: YES

Surface mount capability makes it easier to integrate into electronic circuits.

Nominal Breakdown Voltage: 7 V

High nominal breakdown voltage provides effective suppression of voltage spikes.

Maximum Reverse Current: 1 uA

Low maximum reverse current ensures minimal power loss.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement on circuit boards.

Min Operating Temperature: -55 °C

Wide operating temperature range allows for use in various environments.

Reference Standard: IEC-61000-4-2, 4-5

Compliance with industry standards ensures reliability and performance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode type is specifically designed for voltage spike protection.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures consistent and reliable voltage clamping.

Technical Specifications

Transient Suppression Devices ESD8351N2T5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

ULTRA LOW CAPACITANCE

Maximum Breakdown Voltage:

7.8 V

Minimum Breakdown Voltage:

5.5 V

Nominal Breakdown Voltage:

7 V

Maximum Clamping Voltage:

10 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

3.7 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

3.7 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Trade Compliance

ESD8351N2T5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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