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ESD8101FCT5G

Onsemi

ESD8101FCT5G by Onsemi

ESD8101FCT5G by Onsemi is a single bidirectional avalanche diode with 7.9V breakdown voltage, ideal for transient suppression in electronics. With a max reverse current of 1uA and operating temperature range from -55 to 150 °C, it meets IEC-61000-4-2 standards. This chip carrier package is surface mountable and made of plastic/epoxy material.

Median Price

$0.082

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 354,697 parts In-Stock

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$0.018

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Rochester

USA . 20,511,121 parts In-Stock

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$0.099

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$0.082

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$0.073

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$0.099

$0.082

$0.073

DigiKey

USA . 20,511,121 parts In-Stock

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$0.120

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Verical

USA . 16,950,000 parts In-Stock

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Chip1Stop

Japan . 359,697 parts In-Stock

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$0.031

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Mouser Electronics

USA . 11,203 parts In-Stock

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Digiode

USA . 2,010 parts In-Stock

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$0.017

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Vyrian

USA . 1,696 parts In-Stock

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Bristol Electronics

USA . 1,743,065 parts In-Stock

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$0.375

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$0.188

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$0.075

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$0.047

1,743,065

$0.375

$0.188

$0.075

$0.047

Chip Stock

USA . 61,000 parts In-Stock

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Flip Electronics

USA . 10,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 9,754 parts In-Stock

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Dan-Mar Components

USA . 9,754 parts In-Stock

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Prism Electronics

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SPM Sales

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Corphita

USA . 1,333 parts In-Stock

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$0.016

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Corohmni

South Africa . 164 parts In-Stock

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Component Stockers USA

USA . 17,795,203 parts In-Stock

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Native Components

USA . 975 parts In-Stock

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$0.230

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$0.221

975

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Northwest PG Solutions

USA . 328 parts In-Stock

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328

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Continental Prestige Electronics

USA . 20,145,121 parts In-Stock

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$0.097

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Perfect Parts

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Lixinc

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iodParts Technologies Inc.

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Kulean Microsystems

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TANS Electronics

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Authorized Procurement Solutions

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SupplyDigital Components

Austria . 1,880 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,622 parts In-Stock

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Problanco Electronics

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Alle Elektronik GmbH

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UHIMA Technologies

Türkiye . 793 parts In-Stock

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Overview

Enhance your electronic devices with the ESD8101FCT5G by Onsemi, a top-tier manufacturer known for delivering high-quality transient suppression devices. Designed to protect against voltage spikes and surges, this product offers unrivaled reliability and durability. Ideal for a wide range of applications, including consumer electronics, automotive systems, and industrial equipment, this chip carrier package is easy to install and ensures optimal performance. Trust Onsemi to provide the best-in-class protection for your valuable electronics with the ESD8101FCT5G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making the device suitable for a wide range of environments.

Nominal Breakdown Voltage: 7.9 V

This voltage level ensures effective suppression of transient surges while maintaining reliable operation of the circuit.

Maximum Reverse Current: 1 uA

Low reverse current ensures minimal power consumption and efficient operation of the device.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this device can withstand extreme conditions and perform reliably in various applications.

Reference Standard: IEC-61000-4-2

Compliance with this standard ensures that the device meets industry requirements for transient suppression, making it a reliable choice for protection in sensitive circuits.

Technical Specifications

Transient Suppression Devices ESD8101FCT5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW CAPACITANCE

Maximum Breakdown Voltage:

8.6 V

Minimum Breakdown Voltage:

5.5 V

Nominal Breakdown Voltage:

7.9 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Polarity:

BIDIRECTIONAL

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

3.3 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

3.3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

ESD8101FCT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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