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CS-8312N8

Onsemi

CS-8312N8 by Onsemi

CS-8312N8 by Onsemi is an Automotive IC with 8 terminals in a rectangular package. It operates b/w -40 to 125 °C, with power supplies of 7/10V and max supply current of 15mA. Ideal for automotive applications due to its bipolar technology and through-hole terminal form.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,156 parts In-Stock

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Digiode

USA . 68 parts In-Stock

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68

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 209 parts In-Stock

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$0.294

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$0.282

209

$0.294

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$0.282

Northwest PG Solutions

USA . 901 parts In-Stock

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$0.323

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$0.285

901

$0.323

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$0.285

SupplyDigital Components

Austria . 7,764 parts In-Stock

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Kulean Microsystems

USA . 7,237 parts In-Stock

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Problanco Electronics

Mexico . 6,313 parts In-Stock

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TANS Electronics

Latvia . 3,276 parts In-Stock

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Corphita

USA . 2,414 parts In-Stock

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UHIMA Technologies

Türkiye . 975 parts In-Stock

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Corohmni

South Africa . 404 parts In-Stock

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Overview

Enhance your automotive electronics with the CS-8312N8 by Onsemi. As a reputable manufacturer in the industry, Onsemi delivers top-notch quality and reliability. The CS-8312N8 is designed for a wide range of automotive applications, offering superior performance and efficiency. With its durable plastic/epoxy package and compact design, this Automotive IC ensures consistent operation even in extreme temperatures. Trust Onsemi to provide you with the best solutions for your automotive electronics needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good mechanical strength and durability, making the product suitable for automotive applications where reliability is crucial.

Power Supplies (V): 7/10

Can operate within a wide range of power supply voltages, offering flexibility in different automotive systems.

No. of Terminals: 8

Sufficient number of terminals for connecting to various components in automotive circuits, enabling versatile functionality.

Maximum Operating Temperature: 125 °C

Capable of withstanding high temperatures commonly encountered in automotive environments, ensuring reliable performance under extreme conditions.

Technology: BIPOLAR

Bipolar technology offers high switching speeds and can handle high power levels, making it suitable for automotive applications that require fast response times and efficient power management.

Technical Specifications

Automotive ICs CS-8312N8 attributes and parameters. Explore more Automotive ICs devices from Onsemi

Specs

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e0

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

7/10

Qualification:

Not Qualified

Sub-Category:

Automotive Circuits

Maximum Supply Current (Isup):

15 mA

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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