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CAT34C02VP2IT4

Onsemi

CAT34C02VP2IT4 by Onsemi

CAT34C02VP2IT4 by Onsemi is a 256x8 EEPROM with 2048-bit memory density. It operates at 5V, -40 to 85 °C, and has a max clock frequency of 0.4 MHz. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact form factor.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,766 parts In-Stock

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Vyrian

USA . 1,169 parts In-Stock

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Native Components

USA . 909 parts In-Stock

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$14.923

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909

$14.923

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Northwest PG Solutions

USA . 875 parts In-Stock

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$16.415

100+ parts

$14.774

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875

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$14.774

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SupplyDigital Components

Austria . 5,268 parts In-Stock

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Problanco Electronics

Mexico . 4,372 parts In-Stock

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Corphita

USA . 1,346 parts In-Stock

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TANS Electronics

Latvia . 1,034 parts In-Stock

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Kulean Microsystems

USA . 397 parts In-Stock

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Corohmni

South Africa . 122 parts In-Stock

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UHIMA Technologies

Türkiye . 112 parts In-Stock

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Overview

Unleash the power of reliable data storage with the CAT34C02VP2IT4 by Onsemi. Crafted with precision and expertise, this EEPROM offers unparalleled quality and performance. Ideal for industrial applications, this product ensures seamless operation and data integrity. Say goodbye to worries about data loss or corruption, as this EEPROM provides robust protection with hardware/software write protection. Trust Onsemi to deliver cutting-edge technology that adds value and efficiency to your projects. Choose the CAT34C02VP2IT4 for a top-notch solution that guarantees superior results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the EEPROM lightweight and durable, ideal for various applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving space and reducing manufacturing costs.

Operating Mode: SYNCHRONOUS

Synchronous operation provides precise timing control, ensuring reliable data transfer and communication with other devices.

Nominal Supply Voltage / Vsup (V): 5

Operating at a 5V nominal supply voltage offers compatibility with a wide range of systems and devices.

Power Supplies (V): 2/5

Support for both 2V and 5V power supplies allows flexibility in power configurations, suitable for various voltage requirements.

No. of Terminals: 8

Having 8 terminals enables easy connection and integration into circuits, making installation straightforward.

Package Style (Meter): SMALL OUTLINE, VERY THIN PROFILE

The small outline and thin profile package style saves space on the PCB, crucial for compact electronic designs.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, the EEPROM can withstand harsh environmental conditions, ensuring reliable performance.

Organization: 256X8

The 256X8 organization provides ample memory capacity and data storage capabilities for versatile applications.

Minimum Operating Temperature: -40 °C

The EEPROM can operate in low-temperature environments down to -40 °C, making it suitable for a wide range of operating conditions.

Terminal Finish: MATTE TIN

The matte tin terminal finish offers good conductivity and solderability, facilitating secure connections on the PCB.

I2C Control Byte: 1010DDDR

The I2C control byte allows for easy integration and communication with devices using the I2C protocol, enhancing compatibility.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit layout and PCB design, accommodating different connection configurations.

Write Protection: HARDWARE/SOFTWARE

The option for both hardware and software write protection enhances data security and prevents accidental data loss or corruption.

Maximum Seated Height: 0.8 mm

The low maximum seated height of 0.8mm contributes to the compact profile of the EEPROM, essential for space-constrained applications.

Maximum Clock Frequency (fCLK): 0.4 MHz

With a maximum clock frequency of 0.4 MHz, the EEPROM can efficiently handle data transfer and processing tasks with timely synchronization.

Width: 2 mm

The compact width of 2mm makes the EEPROM suitable for narrow PCB designs and space-limited applications.

Minimum Supply Voltage (Vsup): 1.7 V

The support for a minimum supply voltage of 1.7V ensures reliable operation even in low-power scenarios, expanding the range of compatible systems.

Length: 3 mm

The short length of 3mm contributes to the overall small form factor of the EEPROM, enabling integration into tight spaces.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures stable performance across a broad temperature range, making the EEPROM suitable for rugged industrial environments.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation, making the EEPROM energy-efficient and responsive.

Parallel or Serial: SERIAL

The serial configuration simplifies data transfer and communication protocols, enhancing compatibility with various systems and devices.

Terminal Form: NO LEAD

The no-lead terminal form enables easy soldering and reliable connections, enhancing the durability and longevity of the EEPROM.

Maximum Supply Current: 1 mA

With a maximum supply current of 1mA, the EEPROM operates efficiently without overloading the power supply, ensuring stable performance.

No. of Words: 256 words

The 256-word capacity provides ample storage space for data and program code, suitable for a variety of applications.

Memory Width: 8

The 8-bit memory width enables efficient data processing and storage, supporting versatile data types and operations.

Minimum Data Retention Time: 100

The minimum data retention time of 100 years ensures long-term data integrity and reliability, crucial for critical applications.

Terminal Pitch: 0.5 mm

The small terminal pitch of 0.5mm enables dense PCB layouts and precise connections, enhancing the overall design flexibility.

No. of Words Code: 256

The 256-word code capacity allows for extensive programming and customization options, enabling tailored functionality for specific applications.

Maximum Supply Voltage (Vsup): 5.5 V

Support for a maximum supply voltage of 5.5V provides headroom for voltage fluctuations and ensures stable operation within the specified voltage range.

Endurance: 1000000 Write/Erase Cycles

The high endurance of 1,000,000 write/erase cycles ensures long-lasting performance and data reliability, suitable for frequent data updates and changes.

Serial Bus Type: I2C

Using the I2C serial bus type simplifies communication and integration with other I2C-compatible devices, enhancing overall system interoperability.

Maximum Write Cycle Time (tWC): 5 ms

With a maximum write cycle time of 5ms, the EEPROM can swiftly store and retrieve data, ensuring efficient operation and data access.

Memory Density: 2048 bit

The high memory density of 2048 bits provides ample storage capacity for data storage and processing, accommodating diverse application requirements.

Memory IC Type: EEPROM

As an EEPROM memory IC, the product offers non-volatile memory storage, allowing data retention even when power is disconnected, essential for critical data preservation.

Maximum Standby Current: 0.000001 Amp

With a low maximum standby current of 0.000001A, the EEPROM consumes minimal power in standby mode, ensuring energy efficiency and extended battery life.

Technical Specifications

EEPROM CAT34C02VP2IT4 attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e3

Length:

3 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.11,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Power Supplies (V):

2/5

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

1 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

2 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

CAT34C02VP2IT4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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