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CAT34C02HU4EGT4A

Onsemi

CAT34C02HU4EGT4A by Onsemi

CAT34C02HU4EGT4A by Onsemi is an EEPROM with 256x8 organization, operating at 5V. It offers hardware/software write protection, I2C control byte 1010DDDR, and endurance of 1M cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 845 parts In-Stock

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845

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Vyrian

USA . 720 parts In-Stock

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720

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Distributors (Availability)

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Native Components

USA . 572 parts In-Stock

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$213.360

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$204.826

572

$213.360

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$204.826

Northwest PG Solutions

USA . 1,682 parts In-Stock

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$234.696

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Problanco Electronics

Mexico . 6,645 parts In-Stock

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SupplyDigital Components

Austria . 6,549 parts In-Stock

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6,549

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Kulean Microsystems

USA . 2,124 parts In-Stock

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Corphita

USA . 1,607 parts In-Stock

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TANS Electronics

Latvia . 1,083 parts In-Stock

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Corohmni

South Africa . 251 parts In-Stock

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UHIMA Technologies

Türkiye . 15 parts In-Stock

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Overview

Discover the CAT34C02HU4EGT4A by Onsemi, a high-quality EEPROM that offers reliable data storage solutions for a wide range of applications. With Onsemi's reputation for excellence in manufacturing and innovation, this product delivers unmatched value and benefits to customers. From its sturdy plastic/epoxy package body to its advanced synchronous operating mode, this EEPROM is designed for optimal performance. Whether you're looking to enhance industrial systems or streamline consumer electronics, the CAT34C02HU4EGT4A provides the reliability and efficiency you need. Trust Onsemi for cutting-edge technology that meets your data storage needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the EEPROM, ensuring it can withstand various environmental conditions.

Nominal Supply Voltage / Vsup (V): 5

Operating at a common voltage of 5V makes it compatible with a wide range of electronic devices.

Organization: 256X8

This organization allows for efficient storage and retrieval of data in 256 words of 8 bits each, providing the necessary capacity for many applications.

Maximum Operating Temperature: 85 °C

With a high operating temperature, this EEPROM can function reliably even in demanding industrial environments.

Memory Density: 2048 bit

Offering a decent memory density of 2048 bits, this EEPROM can store a significant amount of data for various use cases.

Endurance: 1000000 Write/Erase Cycles

The high endurance rating ensures that the EEPROM can be written and erased numerous times without degradation, increasing its lifespan.

Serial Bus Type: I2C

Utilizing the I2C serial bus type allows for easy interfacing with other devices, making this EEPROM versatile and convenient to use.

Technical Specifications

EEPROM CAT34C02HU4EGT4A attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e4

Length:

3 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

16

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.11,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Page Size (words):

16

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Ready or Busy:

YES

Reverse Pinout:

NO

Maximum Seated Height:

.55 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

CAT34C02HU4EGT4A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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