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CAT34C02VP2I-GT4

Onsemi

CAT34C02VP2I-GT4 by Onsemi

CAT34C02VP2I-GT4 by Onsemi is an EEPROM with 256-bit memory density, operating at 5V. It features I2C serial bus type, 16x16 organization, and a max clock frequency of 0.4 MHz. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact form factor.

Median Price

$0.379

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 171,280 parts In-Stock

1+ parts

-

100+ parts

$0.357

1k+ parts

$0.296

10k+ parts

$0.264

171,280

-

$0.357

$0.296

$0.264

Verical

USA . 119,650 parts In-Stock

1+ parts

-

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$0.401

10k+ parts

$0.330

119,650

-

-

$0.401

$0.330

Distributors (In-Stock)

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Digiode

USA . 397 parts In-Stock

1+ parts

$0.277

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397

$0.277

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Vyrian

USA . 1,622 parts In-Stock

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$0.292

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1,622

$0.292

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DF Sales Co.

USA . 1,180 parts In-Stock

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$0.386

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1,180

$0.386

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DF Sales Co.

USA . 1,180 parts In-Stock

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$0.386

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1,180

$0.386

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ACDS - Activité Composants Distribution Service

France . 3,960 parts In-Stock

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3,960

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Bristol Electronics

USA . 3,960 parts In-Stock

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3,960

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Dan-Mar Components

USA . 3,960 parts In-Stock

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3,960

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Semi Source

USA . 1,189 parts In-Stock

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1,189

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Distributors (Availability)

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Ampacity Inc.

Singapore . 145,389 parts In-Stock

1+ parts

$0.248

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145,389

$0.248

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Corphita

USA . 2,281 parts In-Stock

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$0.263

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2,281

$0.263

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Corohmni

South Africa . 283 parts In-Stock

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$0.292

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283

$0.292

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Native Components

USA . 78 parts In-Stock

1+ parts

$115.190

100+ parts

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$110.582

78

$115.190

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-

$110.582

Northwest PG Solutions

USA . 117 parts In-Stock

1+ parts

$126.709

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117

$126.709

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Perfect Parts

USA . 203,632 parts In-Stock

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203,632

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RC Electronics

USA . 56,034 parts In-Stock

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$0.420

1k+ parts

$0.390

10k+ parts

$0.370

56,034

-

$0.420

$0.390

$0.370

QUARKTWIN TECHNOLOGY LTD

USA . 19,703 parts In-Stock

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Metaverse IC Inc.

Canada . 12,000 parts In-Stock

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Problanco Electronics

Mexico . 8,111 parts In-Stock

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Kepictronics

USA . 8,070 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,421 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,947 parts In-Stock

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4,947

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SupplyDigital Components

Austria . 4,725 parts In-Stock

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4,725

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Authorized Procurement Solutions

USA . 4,500 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Microchip USA

USA . 3,064 parts In-Stock

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Kulean Microsystems

USA . 1,589 parts In-Stock

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TANS Electronics

Latvia . 318 parts In-Stock

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318

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UHIMA Technologies

Türkiye . 217 parts In-Stock

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217

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Overview

Unlock a world of possibilities with the CAT34C02VP2I-GT4 EEPROM from Onsemi. Known for their high-quality products, Onsemi delivers reliable solutions for a wide range of applications. This EEPROM offers unparalleled value with its robust construction and efficient performance. Whether you're looking to enhance the functionality of your devices or streamline your operations, this product provides the reliability and durability you need. Trust Onsemi to meet your EEPROM needs and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the EEPROM lightweight and durable, ideal for portable devices.

Operating Mode: SYNCHRONOUS

The synchronous operating mode allows for faster data transfer, improving overall performance.

Nominal Supply Voltage / Vsup (V): 5

With a nominal supply voltage of 5V, the EEPROM can easily interface with standard power sources.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature allows the EEPROM to function reliably even in harsh environments.

Memory Density: 256 bit

The high memory density of 256 bits means the EEPROM can store a significant amount of data in a small footprint.

Endurance: 1000000 Write/Erase Cycles

The EEPROM's high endurance of 1,000,000 write/erase cycles ensures long-term reliability and data retention.

Technical Specifications

EEPROM CAT34C02VP2I-GT4 attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Additional Features:

100 YEAR DATA RETENTION

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e4

Length:

3 mm

Memory Density:

256 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16X16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.11,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Page Size (words):

16

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/5

Qualification:

Not Qualified

Ready or Busy:

YES

Reverse Pinout:

NO

Maximum Seated Height:

.8 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

CAT34C02VP2I-GT4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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