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CAT34C02VP2IT5

Onsemi

CAT34C02VP2IT5 by Onsemi

CAT34C02VP2IT5 by Onsemi is an EEPROM with 256x8 organization, 2048-bit memory density, and 1000000 write/erase cycles. It operates in industrial temperature range (-40 to 85 °C) and uses I2C serial bus for control. Ideal for applications requiring reliable non-volatile memory storage in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,289 parts In-Stock

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Vyrian

USA . 934 parts In-Stock

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934

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Native Components

USA . 13 parts In-Stock

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$0.057

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$0.055

13

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$0.055

Kulean Microsystems

USA . 8,327 parts In-Stock

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SupplyDigital Components

Austria . 6,363 parts In-Stock

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TANS Electronics

Latvia . 6,088 parts In-Stock

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Problanco Electronics

Mexico . 4,398 parts In-Stock

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Northwest PG Solutions

USA . 2,116 parts In-Stock

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UHIMA Technologies

Türkiye . 812 parts In-Stock

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Corphita

USA . 412 parts In-Stock

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Corohmni

South Africa . 307 parts In-Stock

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Overview

Unlock endless possibilities with the CAT34C02VP2IT5 EEPROM by Onsemi. This cutting-edge technology offers unparalleled quality and reliability, making it the ideal choice for a wide range of applications. From industrial automation to consumer electronics, this product delivers superior performance and efficiency. With its advanced features and innovative design, customers can trust that their data is secure and easily accessible. Experience the value and benefits that Onsemi brings to the table with the CAT34C02VP2IT5, setting new standards in memory technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection to the EEPROM, making it suitable for various industrial applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient mounting on circuit boards, saving space and simplifying the assembly process.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this EEPROM can withstand harsh environmental conditions and ensure reliable performance in demanding industrial settings.

Organization: 256X8

The organization of 256X8 allows for efficient storage and retrieval of data in small chunks, making it suitable for applications requiring frequent read/write operations.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this EEPROM energy-efficient and reliable in noisy industrial environments.

Endurance: 1000000 Write/Erase Cycles

With a high endurance of 1,000,000 write/erase cycles, this EEPROM ensures longevity and reliability for frequent data storage and retrieval operations.

Memory IC Type: EEPROM

Being an EEPROM memory IC, this product allows for non-volatile data storage, retaining information even when power is turned off, making it suitable for critical applications.

Technical Specifications

EEPROM CAT34C02VP2IT5 attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-N8

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SON

Package Equivalence Code:

SOLCC8,.11,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Power Supplies (V):

2/5

Qualification:

Not Qualified

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

1 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

CAT34C02VP2IT5 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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