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CAT34C02VP2I-TE13

Onsemi

CAT34C02VP2I-TE13 by Onsemi

CAT34C02VP2I-TE13 by Onsemi is an EEPROM with 256x8 organization, I2C control byte 1010DDDR, and 2048-bit memory density. It operates in industrial temperature range (-40 to 85 °C) and offers write protection via hardware/software. Ideal for applications requiring reliable non-volatile memory storage in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,302 parts In-Stock

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Vyrian

USA . 14 parts In-Stock

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Native Components

USA . 54 parts In-Stock

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$1.805

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Northwest PG Solutions

USA . 211 parts In-Stock

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$1.985

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SupplyDigital Components

Austria . 7,714 parts In-Stock

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Problanco Electronics

Mexico . 2,381 parts In-Stock

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TANS Electronics

Latvia . 2,305 parts In-Stock

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Corphita

USA . 1,359 parts In-Stock

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UHIMA Technologies

Türkiye . 733 parts In-Stock

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Corohmni

South Africa . 471 parts In-Stock

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Kulean Microsystems

USA . 141 parts In-Stock

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Overview

Unlock the power of reliable data storage with the CAT34C02VP2I-TE13 by Onsemi. Crafted with precision and quality in mind, this EEPROM device offers unparalleled performance for a wide range of applications. From industrial machinery to consumer electronics, this small outline package delivers exceptional value and benefits to customers seeking secure and efficient memory solutions. Trust in Onsemi's expertise and experience in semiconductor technology to enhance your product's performance and reliability. Elevate your designs with the CAT34C02VP2I-TE13 and experience the advantages of superior memory technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the EEPROM, ensuring long-lasting performance.

Surface Mount: YES

Ease of installation and integration into electronic systems.

Power Supplies (V): 2/5

Can operate effectively at multiple voltage levels, increasing flexibility in different applications.

Maximum Operating Temperature: 85 °C

Can withstand high operational temperatures, suitable for industrial environments.

Memory Density: 2048 bit

Offers a large memory density for storing a significant amount of data.

Endurance: 1000000 Write/Erase Cycles

High endurance ensures longevity and reliability of the EEPROM for frequent read/write operations.

Technical Specifications

EEPROM CAT34C02VP2I-TE13 attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-N8

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SON

Package Equivalence Code:

SOLCC8,.11,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Power Supplies (V):

2/5

Qualification:

Not Qualified

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

1 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

CAT34C02VP2I-TE13 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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