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CAT34C02VP2I-G

Onsemi

CAT34C02VP2I-G by Onsemi

CAT34C02VP2I-G by Onsemi is an EEPROM with 256x8 organization, 2048-bit memory density, and 1000000 write/erase cycles. It operates in industrial temperature range (-40 to 85 °C) and uses I2C serial bus for control. Ideal for applications requiring reliable non-volatile memory storage in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,548 parts In-Stock

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1,548

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Vyrian

USA . 1,059 parts In-Stock

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1,059

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Distributors (Availability)

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Native Components

USA . 627 parts In-Stock

1+ parts

$55.275

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$53.064

627

$55.275

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$53.064

Northwest PG Solutions

USA . 2,111 parts In-Stock

1+ parts

$60.803

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2,111

$60.803

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SupplyDigital Components

Austria . 7,664 parts In-Stock

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7,664

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Problanco Electronics

Mexico . 7,395 parts In-Stock

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7,395

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Corphita

USA . 1,808 parts In-Stock

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Kulean Microsystems

USA . 1,511 parts In-Stock

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1,511

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TANS Electronics

Latvia . 1,199 parts In-Stock

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Corohmni

South Africa . 228 parts In-Stock

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UHIMA Technologies

Türkiye . 96 parts In-Stock

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Overview

Discover the CAT34C02VP2I-G by Onsemi, a top-quality EEPROM that offers unmatched reliability and performance. Onsemi, known for its innovative solutions, has designed this product to meet the demanding requirements of industrial applications. With a compact package and low power consumption, this EEPROM is ideal for various electronics projects. Benefit from its high endurance and user-friendly write protection features, ensuring your data is safe and secure. Trust Onsemi's expertise and unlock the full potential of your designs with the CAT34C02VP2I-G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/epoxy material provides durability and protection to the EEPROM, making it suitable for various environments.

Surface Mount: YES

Surface mount design allows for easy installation and saves space on the PCB.

Power Supplies (V): 2/5

Support for 2/5 volts power supplies provides flexibility in different operating conditions.

No. of Terminals: 8

Having 8 terminals allows for easy connection and integration with other components.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and is ideal for compact electronic devices.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliable performance even in harsh conditions.

Organization: 256X8

256X8 organization provides ample storage capacity for data.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for use in cold environments.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature range ensures stable operation in industrial applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Parallel or Serial: SERIAL

Serial interface simplifies communication with other devices and allows for easy integration.

Memory IC Type: EEPROM

EEPROM memory technology enables non-volatile data storage and retrieval.

Technical Specifications

EEPROM CAT34C02VP2I-G attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-N8

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SON

Package Equivalence Code:

SOLCC8,.11,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Power Supplies (V):

2/5

Qualification:

Not Qualified

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

1 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

CAT34C02VP2I-G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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