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CAT34C02VP2I-GT3

Onsemi

CAT34C02VP2I-GT3 by Onsemi

CAT34C02VP2I-GT3 by Onsemi is a 256x8 EEPROM with 2048-bit memory density. It operates at 5V, has I2C control byte 1010DDDR, and supports synchronous mode. Ideal for industrial applications requiring reliable non-volatile memory storage in compact designs.

Median Price

$0.950

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

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DF Sales Co.

USA . 2,190 parts In-Stock

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$0.950

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DF Sales Co.

USA . 2,190 parts In-Stock

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$0.950

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Dan-Mar Components

USA . 167,195 parts In-Stock

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Bristol Electronics

USA . 159,195 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 12,000 parts In-Stock

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Digiode

USA . 2,074 parts In-Stock

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Microfarads

USA . 567 parts In-Stock

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Vyrian

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Corohmni

South Africa . 96 parts In-Stock

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Native Components

USA . 738 parts In-Stock

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$39.390

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$37.814

738

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$37.814

Northwest PG Solutions

USA . 2,194 parts In-Stock

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$43.329

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QUARKTWIN TECHNOLOGY LTD

USA . 14,320 parts In-Stock

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Microchip USA

USA . 11,027 parts In-Stock

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SupplyDigital Components

Austria . 8,082 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,192 parts In-Stock

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Problanco Electronics

Mexico . 6,069 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,128 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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TANS Electronics

Latvia . 1,305 parts In-Stock

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Corphita

USA . 1,089 parts In-Stock

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UHIMA Technologies

Türkiye . 925 parts In-Stock

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Metaverse IC Inc.

Canada . 600 parts In-Stock

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Kulean Microsystems

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Overview

Unlock the power of reliable data storage with the CAT34C02VP2I-GT3 EEPROM by Onsemi. This compact, versatile chip offers a wide range of applications in various industries. With Onsemi's reputation for exceptional quality and cutting-edge technology, you can trust that this EEPROM delivers superior performance and durability. Make your projects more efficient and secure with the value and benefits that this product provides. Experience seamless operation and peace of mind knowing that your data is safe and easily accessible. Elevate your designs with the CAT34C02VP2I-GT3 and discover endless possibilities today.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy and convenient installation on printed circuit boards, saving space and simplifying manufacturing processes.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space on a PCB and easy integration into electronic designs.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures reliable and predictable communication and data transfer within the system.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage supply of 5V makes it compatible with common electronic systems and power sources.

Power Supplies (V): 2/5

Supports dual power supplies, providing flexibility in system design and power management.

No. of Terminals: 8

Compact design with 8 terminals allows for efficient connectivity and integration in electronic circuits.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Compact and heat-efficient package style enables low power consumption and space-saving designs.

Maximum Operating Temperature: 85 °C

Wide operating temperature range allows for reliable performance in various environmental conditions.

Organization: 256X8

Organized as 256 words of 8 bits each, providing ample memory capacity for storing data efficiently.

Minimum Operating Temperature: -40 °C

Capable of operating in low temperature conditions, ensuring stable performance in harsh environments.

Terminal Finish: NICKEL PALLADIUM GOLD

Durable terminal finish enhances contact reliability and corrosion resistance for long-term use.

I2C Control Byte: 1010DDDR

Standard I2C control byte format for easy interfacing and communication with other devices in the system.

Terminal Position: DUAL

Dual terminal position design allows for flexible mounting options and simplified PCB layout.

Write Protection: HARDWARE/SOFTWARE

Offers both hardware and software write protection options for secure data storage and manipulation.

Maximum Seated Height: 0.8 mm

Low profile design with a maximum seated height of 0.8mm enables compact and space-saving device designs.

Maximum Clock Frequency (fCLK): 0.4 MHz

High clock frequency support for fast data access and transfer speeds within the system.

Width: 2 mm

Narrow width of 2mm allows for efficient use of space on a PCB and easy integration into electronic designs.

Minimum Supply Voltage (Vsup): 1.7 V

Wide range of supply voltage ensures compatibility with different power sources and voltage levels.

Peak Reflow Temperature °C: 260

High peak reflow temperature support for reliable and durable solder connections during manufacturing processes.

Length: 3 mm

Compact length of 3mm allows for efficient use of space on a PCB and easy integration into electronic designs.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature range support for reliable performance in rugged and demanding operating environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity for efficient and reliable operation.

Parallel or Serial: SERIAL

Serial communication interface allows for easy integration and communication with other devices in the system.

Terminal Form: NO LEAD

Lead-free terminal form for environmentally friendly and RoHS-compliant manufacturing and disposal.

Maximum Supply Current: 1 mA

Low supply current of 1mA for efficient power consumption and extended battery life in portable devices.

No. of Words: 256 words

Ample memory capacity of 256 words for storing data efficiently and effectively in the EEPROM.

Memory Width: 8

Data word width of 8 bits provides flexibility and efficiency in data storage and retrieval operations.

Minimum Data Retention Time: 100

Long data retention time of 100 years ensures reliable storage and preservation of critical data.

Terminal Pitch: 0.5 mm

Fine terminal pitch of 0.5mm allows for high-density mounting and integration in compact electronic devices.

No. of Words Code: 256

Coding scheme for 256 words allows for efficient organization and addressing of data in the EEPROM.

Maximum Supply Voltage (Vsup): 5.5 V

Maximum supply voltage of 5.5V for safe and reliable operation within specified voltage limits.

Endurance: 1000000 Write/Erase Cycles

High endurance rating of 1,000,000 write/erase cycles for reliable and durable data storage and manipulation.

Serial Bus Type: I2C

I2C serial bus interface for easy and standardized communication with other devices in the system.

Maximum Write Cycle Time (tWC): 5 ms

Quick write cycle time of 5ms for fast and efficient data write operations in the EEPROM.

Memory Density: 2048 bit

High memory density of 2048 bits for storing a large amount of data in a compact and efficient manner.

Memory IC Type: EEPROM

Electronically Erasable Programmable Read-Only Memory (EEPROM) technology for non-volatile data storage and retrieval.

Maximum Standby Current: 0.000001 Amp

Ultra-low standby current consumption of 0.000001A for minimal power usage during idle or standby modes.

Technical Specifications

EEPROM CAT34C02VP2I-GT3 attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-XDSO-N8

JESD-609 Code:

e4

Length:

3 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256X8

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC8,.11,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

1 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

2 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

CAT34C02VP2I-GT3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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