Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BFR31LT1 by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. It features DEPLETION MODE operation, GULL WING terminals, and 1.5pF Crss feedback capacitance. With a max power dissipation of 0.3W and operating temperature up to 150°C, it is suitable for small outline surface mount designs.
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This material provides durability and protection to the transistor, making it suitable for various applications and environments.
N-CHANNEL transistors typically have lower ON resistance and better performance, which is advantageous for amplifier applications.
Single configuration simplifies circuit design and reduces complexity, making it easier to use in amplifier circuits.
Designed specifically for amplifier applications, ensuring optimal performance and efficiency in signal amplification.
Surface mount design allows for easy installation on PCBs, saving space and facilitating automated assembly processes.
With a minimum breakdown voltage of 25V, this transistor can handle higher voltages without breakdown, ensuring reliability in operation.
Rectangular package shape provides a compact form factor, making it suitable for applications where space is limited.
Gull wing terminals offer easy soldering and reliable connections, enhancing the overall durability and longevity of the transistor.
Depletion mode operation allows for easy biasing and control, making this transistor suitable for a wide range of amplifier circuits.
With a maximum power dissipation of 0.3W, this transistor can handle moderate power levels, ensuring efficient operation in amplifier circuits.
Small outline package style saves space on the PCB and enables compact circuit designs, ideal for applications with size constraints.
Junction FET technology offers high performance and reliability, making this transistor a suitable choice for amplifier applications.
With a maximum operating temperature of 150°C, this transistor can withstand elevated temperatures, ensuring stability and longevity in operation.
Silicon is a common and reliable semiconductor material, providing good electrical properties and performance for amplifier circuits.
Tin/Lead terminal finish offers good solderability and conductivity, ensuring reliable connections and preventing corrosion over time.
Dual terminal position allows for flexible connection options, making it easier to integrate this transistor into different circuit configurations.
With a maximum time of 30 seconds at peak reflow temperature, this transistor can withstand soldering processes without degradation.
Peak reflow temperature of 235°C ensures proper soldering and reliability during assembly processes, maintaining the integrity of the transistor.
Low feedback capacitance of 1.5pF reduces signal distortion and improves high-frequency performance in amplifier circuits.
Small Signal Field Effect Transistors (FET) BFR31LT1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi
Configuration:
Minimum DS Breakdown Voltage:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
BFR31LT1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
IRLML6402TRPBF
Infineon Technologies
IRLML6402TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 22A IDM, and 0.065 ohm RDS(on). With a small outline package and matte tin finish, it operates in temperatures from -55 to 150 °C.
1N4148
Laube Technology
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Semitronics
NC7WZ07P6X
Onsemi
The Onsemi NC7WZ07P6X is a logic gate with 2 functions, featuring a propagation delay of 4.8 ns at 1.8V supply voltage. With open-drain output characteristics, it operates in industrial temperatures from -40 to 85°C. Ideal for applications requiring fast signal processing and low power consumption in compact designs.
BAV99
Vishay Telefunken
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
International Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Synsemi
SS14
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
STM32F103C8T6
STMicroelectronics
STM32F103C8T6 by STMicroelectronics is a 32-bit microcontroller with 48 terminals, operating at up to 16 MHz. It features 10-Ch 12-Bit ADC channels and 7 DMA channels, suitable for industrial applications requiring low power consumption and high-speed connectivity via CAN, I2C(2), SPI(2), USART(3), USB.
Cheng-yi Electronic
LAN8720A-CP-TR
Microchip Technology
LAN8720A-CP-TR by Microchip: Ethernet transceiver with 100 Mbps data rate, operates at 3.3V, and consumes 54mA max supply current. Ideal for network interfaces in commercial applications due to its small size (4x4mm) and low power consumption.
SN65HVD234DR
Texas Instruments
SN65HVD234DR by Texas Instruments is an 8-terminal interface circuit with a data rate of 1 Mbps. Operating temperature ranges from -40 to 125 °C, making it ideal for automotive applications. With a supply voltage of 3.3 V and low current draw of 6 mA, it's suitable for network interfaces in compact designs.
RC0603JR-070RL
Yageo
Yageo's RC0603JR-070RL is a SMT fixed resistor with 0 ohm resistance, rated for temperatures from -55 to 155 °C. Its metal glaze/thick film technology and 0.1 W power dissipation make it ideal for jumper applications in various electronic devices.
PIC18F4550-I/P
PIC18F4550-I/P by Microchip Technology is an 8-bit microcontroller with a max clock frequency of 48 MHz. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it ideal for industrial applications requiring low power consumption and high-speed data processing. With 2048 RAM bytes and 256 Data EEPROM size, this CMOS technology-based microcontroller offers versatile performance in various embedded systems.
Micro Commercial Components
LM358N
LM358N by Texas Instruments is an operational amplifier with 2 functions, offering a max input offset voltage of 9000 uV and a nominal common mode reject ratio of 85 dB. Widely used in commercial applications, it operates at temperatures ranging from 0 to 70 °C and has a unity gain bandwidth of 1000 kHz.
SMBJ18CA
Vishay Semiconductors
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Zetex Plc
Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 100 V; Config: SINGLE; No. of Phases: 1; No. of Elements: 1;
ERJ3GEY0R00V
Panasonic
ERJ3GEY0R00V by Panasonic is a SMT fixed resistor with 0 ohm resistance, suitable for jumper applications. It features a metal glaze/thick film technology, rated for temperatures b/w -55 to 155 °C. With a compact rectangular construction and matte tin over nickel terminal finish, it is ideal for surface mount installations in various electronic devices.
NDS355AN
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; JESD-30 Code: R-PDSO-G3; Terminal Position: DUAL;
STN3P6F6
STN3P6F6 by STMicroelectronics is a P-CHANNEL FET with 60V DS breakdown voltage and 3A ID. It's used for switching applications in enhancement mode, featuring 0.16 ohm RDS(on) and built-in diode. The transistor has a GULL WING terminal form, operates in DUAL position, and can withstand peak reflow temp of 260°C.
ZXMN6A07FTA
Diodes Incorporated
ZXMN6A07FTA by Diodes Inc. is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.93A Drain Current, and 0.3 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with 150°C max temp.
BS170
Lite-on Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: WIRE; Terminal Position: BOTTOM;
BS170-D75Z
BS170-D75Z by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.5A Drain Current, and 5 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Operates at up to 150°C with a power dissipation of 0.83W in a ROUND package.
FDN304P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Terminal Finish: MATTE TIN; Maximum Operating Temperature: 150 Cel;
BSS84
General Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Style (Meter): SMALL OUTLINE; Additional Features: LOGIC LEVEL COMPATIBLE;
BS170FTA
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 60 V;
SI4532CDY-T1-GE3
Vishay Intertechnology
SI4532CDY-T1-GE3 by Vishay Intertechnology is a Small Signal FET with N/P-channel, 2 elements, and built-in diode. It operates in enhancement mode for switching applications. With max drain current of 6A, 0.047 ohm RDS(on), and 30V breakdown voltage, it's ideal for high-power circuits in small outline packages.
Good-ark Electronics
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Drain Current (ID): .13 A; Package Shape: RECTANGULAR;
LND150N3-GP014
LND150N3-GP014 by Microchip is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. Operating in depletion mode, it has a max ID of 0.03A and RDS(on) of 1000Ω. With a temp range of -55 to 150°C, it features METAL-OXIDE SEMICONDUCTOR tech and a built-in diode for efficient performance.
FDN352AP
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Package Style (Meter): SMALL OUTLINE; No. of Elements: 1;
BSS131H6327XTSA1
BSS131H6327XTSA1 by Infineon Technologies is a small signal N-channel FET with a min DS breakdown voltage of 240V. It operates in enhancement mode and has a max drain current of 0.11A. This transistor is commonly used in automotive applications due to its AEC-Q101 reference standard and moisture sensitivity level of 1.
FDN302P
FDN302P by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 2.4A and 0.055 ohm Drain-Source Resistance, operating in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C.
2N7000
Calogic
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Terminal Position: BOTTOM; Maximum Operating Temperature: 150 Cel;
FDV304PD87Z
Fairchild Semiconductor's FDV304PD87Z is a P-CHANNEL FET with 25V DS Breakdown Voltage, 0.46A ID, and 1.1 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. The SMALL OUTLINE package features GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology.
2N7002T
Temic Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING;
FDMC8030
FDMC8030 by Onsemi is a N-CHANNEL FET for SWITCHING applications. It features 40V DS Breakdown Voltage, 50A Max Pulsed Drain Current, and 21mJ Avalanche Energy Rating. With a SQUARE package shape and NO LEAD terminals, it operates in ENHANCEMENT MODE with a max power dissipation of 14W at 150°C.
FDC658AP
The Onsemi FDC658AP is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has 4A ID and 0.05 ohm RDS(on), suitable for surface mount designs.
BSS306NH6327XTSA1
BSS306NH6327XTSA1 by Infineon Technologies is a N-CHANNEL FET with 30V DS Breakdown Voltage and 2.3A ID. It features a 0.057 ohm RDS(on) and 17pF Crss, suitable for small signal applications in electronics requiring high drain current capabilities. The PLASTIC/EPOXY package with GULL WING terminals makes it ideal for surface mount designs in enhancement mode operation.
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BFR31
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Operating Mode: DEPLETION MODE; JESD-30 Code: R-PDSO-G3;
Allegro MicroSystems
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-609 Code: e0; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-226AA;
Philips Components
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 25 V; Operating Mode: DEPLETION MODE; Field Effect Transistor Technology: JUNCTION;
BFR31LT1
Motorola
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Transistor Application: AMPLIFIER; No. of Terminals: 3;
BFR31LT1G
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Terminal Finish: Tin (Sn); Maximum Time At Peak Reflow Temperature (s): 40;
BFR31,215
NXP Semiconductors' BFR31,215 is a N-CHANNEL FET with 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications, it features DEPLETION MODE operation and GULL WING terminals. With a max power dissipation of 0.3W and operating temp up to 150°C, it's designed for small outline packages.
BFR30,215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Transistor Application: AMPLIFIER; Field Effect Transistor Technology: JUNCTION;
BFR30LT1G
BFR30LT1G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. It features DEPLETION MODE operation, GULL WING terminals, and 1.5pF Crss feedback capacitance. The transistor has a max power dissipation of 0.3W and can operate at temperatures up to 150°C.
BFR31L
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; No. of Elements: 1; Package Style (Meter): SMALL OUTLINE;
BFR31T/R
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Operating Temperature: 150 Cel; Minimum DS Breakdown Voltage: 25 V;
BFR31LT3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 25 V; Terminal Finish: TIN LEAD; JEDEC-95 Code: TO-236AB;
BFR30LT3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: JUNCTION; Package Style (Meter): SMALL OUTLINE; Package Body Material: PLASTIC/EPOXY;
BFR30LT1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 150 Cel;
BFR30-TAPE-7
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Operating Temperature: 150 Cel; Terminal Position: DUAL;
BFR30T/R
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Terminal Form: GULL WING; Maximum Time At Peak Reflow Temperature (s): 40;
BFR30TRL
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): 1.5 pF; Transistor Application: AMPLIFIER; Terminal Form: GULL WING;
BFR30TRL13
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: JUNCTION; No. of Terminals: 3;
BFR30
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Transistor Element Material: SILICON; JEDEC-95 Code: TO-236AB;
BFR30-T
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: JUNCTION; Terminal Position: DUAL;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-236AB; Transistor Application: AMPLIFIER;
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