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BFR30LT3

Onsemi

BFR30LT3 by Onsemi

BFR30LT3 by Onsemi is a N-CHANNEL FET in PLASTIC/EPOXY package. It operates in DEPLETION MODE for AMPLIFIER applications with 25V DS Breakdown Voltage. With GULL WING terminals, it has a Max Operating Temperature of 150 °C and Crss of 1.5 pF.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,021 parts In-Stock

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Digiode

USA . 303 parts In-Stock

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Native Components

USA . 998 parts In-Stock

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$0.193

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$0.185

998

$0.193

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$0.185

Northwest PG Solutions

USA . 524 parts In-Stock

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$0.212

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$0.187

524

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SupplyDigital Components

Austria . 5,253 parts In-Stock

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TANS Electronics

Latvia . 5,224 parts In-Stock

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Problanco Electronics

Mexico . 4,970 parts In-Stock

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Kulean Microsystems

USA . 2,817 parts In-Stock

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Corphita

USA . 1,757 parts In-Stock

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UHIMA Technologies

Türkiye . 713 parts In-Stock

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Corohmni

South Africa . 315 parts In-Stock

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Overview

Enhance your electronic projects with the BFR30LT3 by Onsemi, a top-of-the-line N-CHANNEL Small Signal Field Effect Transistor (FET). Manufactured with precision and expertise by Onsemi, this amplifier transistor offers unmatched quality, reliability, and performance. With its compact design and versatile applications, it is perfect for various electronic applications. Experience exceptional value and benefits with the BFR30LT3, providing customers with innovative solutions for their projects. Upgrade your electronics with Onsemi's BFR30LT3 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better performance characteristics and are commonly used in amplifier applications, making this transistor a reliable choice for amplification tasks.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to implement this transistor in various amplifier setups and applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor is optimized for efficient signal amplification, making it a suitable choice for audio or other signal amplification needs.

Surface Mount: YES

The surface mount capability allows for easy and convenient installation on circuit boards, saving space and making assembly processes more efficient.

Minimum DS Breakdown Voltage: 25 V

The minimum breakdown voltage of 25 V provides a safety margin for the transistor to operate reliably within specified voltage limits, ensuring protection against voltage spikes or surges.

Package Shape: RECTANGULAR

The rectangular package shape allows for compact and efficient placement on circuit boards, maximizing space utilization and enabling flexible design layouts.

Terminal Form: GULL WING

The gull-wing terminal form facilitates easy soldering and mounting of the transistor on PCBs, ensuring secure connections and reliable performance in various operating conditions.

Operating Mode: DEPLETION MODE

The depletion mode operation offers unique characteristics for signal amplification and switching applications, providing versatility and enhanced performance in diverse circuit configurations.

No. of Terminals: 3

With three terminals, this transistor offers flexible connectivity options and can be easily integrated into different circuit designs, providing versatility in amplifier applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style conserves space on circuit boards and helps optimize overall system compactness, making it ideal for compact amplifier designs or applications with limited space.

Field Effect Transistor Technology: JUNCTION

The junction technology used in this FET provides reliable performance and efficient signal amplification, ensuring stable operation and consistent output in amplifier circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments and ensure stable performance even under demanding operating conditions.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its high performance and reliability, making this transistor a durable and efficient choice for amplifier applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish enhances solderability and ensures secure connections, contributing to the overall reliability and long-term performance of the transistor in amplifier circuits.

Terminal Position: DUAL

The dual terminal position offers flexible connectivity options and facilitates easy integration into circuit designs, allowing for versatile amplifier configurations and reliable signal amplification.

Maximum Feedback Capacitance (Crss): 1.5 pF

The low feedback capacitance of 1.5 pF helps minimize signal distortion and interference, ensuring high-fidelity signal amplification and improved overall performance in amplifier applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) BFR30LT3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

25 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

1.5 pF

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BFR30LT3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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