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BD787

Onsemi

BD787 by Onsemi

The Onsemi BD787 is a NPN BJT transistor with 60V VCE, 4A IC, and 15W Ptot. Ideal for switching applications, it has a min hFE of 5 and operates up to 150 °C. Its through-hole package style makes it suitable for various electronic designs.

Median Price

$0.341

Lifecycle Status

Suppliers In-Stock

7

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1k+

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Digiode

USA . 1,087 parts In-Stock

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Vyrian

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Bristol Electronics

USA . 220 parts In-Stock

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$0.341

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$0.197

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LittleDiode

UK . 98 parts In-Stock

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ComSIT Distribution GmbH

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ACDS - Activité Composants Distribution Service

France . 55 parts In-Stock

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ECAB

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Native Components

USA . 11 parts In-Stock

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Metaverse IC Inc.

Canada . 88,168 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Kulean Microsystems

USA . 6,689 parts In-Stock

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Problanco Electronics

Mexico . 4,552 parts In-Stock

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TANS Electronics

Latvia . 4,274 parts In-Stock

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Corphita

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Perfect Parts

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Northwest PG Solutions

USA . 1,090 parts In-Stock

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SupplyDigital Components

Austria . 816 parts In-Stock

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Corohmni

South Africa . 454 parts In-Stock

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UHIMA Technologies

Türkiye . 108 parts In-Stock

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Overview

The BD787 by Onsemi is a top-of-the-line Power Bipolar Junction Transistor that guarantees exceptional performance and reliability. With a focus on quality, Onsemi ensures that each component meets the highest standards in the industry. This NPN transistor is ideal for switching applications, offering seamless functionality and efficiency. The BD787 is designed to deliver maximum power dissipation of 15W, making it a powerful tool for various projects. Whether you're working on electronics, automotive, or industrial applications, the BD787 provides exceptional value, benefits, and advantages that will elevate your work to the next level. Trust Onsemi for all your transistor needs and experience unparalleled performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides good protection and durability for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering good performance and reliability.

Configuration: SINGLE

The single configuration simplifies the design and implementation of the transistor in circuits, making it easy to use.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can efficiently control the flow of current through a circuit, making it ideal for power control.

Maximum Power Dissipation (Abs): 15 W

With a high power dissipation capacity of 15 W, this transistor can handle relatively high power levels without overheating, ensuring reliable operation.

Maximum Collector-Emitter Voltage: 60 V

The high collector-emitter voltage rating of 60 V allows this transistor to be used in a wide range of applications where higher voltages are required.

Maximum Collector Current (IC): 4 A

The high collector current rating of 4 A allows this transistor to handle large currents without any issues, making it suitable for power applications.

Nominal Transition Frequency (fT): 50 MHz

With a high transition frequency of 50 MHz, this transistor can switch on and off rapidly, making it suitable for high-speed applications such as RF amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD787 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-225

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD787 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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