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BD788

Onsemi

BD788 by Onsemi

The Onsemi BD788 is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 60V and a max collector current of 4A. It is commonly used for switching applications, with a min DC current gain of 5 and a max power dissipation of 15W.

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Vyrian

USA . 861 parts In-Stock

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Nova Conductors

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Digiode

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ComSIT Distribution GmbH

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ComSIT USA

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Electronic Expediters

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ECAB

Sweden . 5 parts In-Stock

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LittleDiode

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Aztec Data Supply Inc.

USA . 290 parts In-Stock

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$0.480

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290

$0.480

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AZTECH Wire

Italy . 861 parts In-Stock

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$9.383

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861

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Semicontronic

India . 894 parts In-Stock

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$31.050

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$30.274

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$30.118

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894

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Kepictronics

USA . 61,000 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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TANS Electronics

Latvia . 7,674 parts In-Stock

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SupplyDigital Components

Austria . 6,042 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,592 parts In-Stock

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Problanco Electronics

Mexico . 5,496 parts In-Stock

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Kulean Microsystems

USA . 4,250 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,728 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Continental Prestige Electronics

USA . 2,109 parts In-Stock

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Corphita

USA . 1,339 parts In-Stock

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Argo Parts USA

USA . 1,231 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Robosynatics

Brazil . 900 parts In-Stock

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Lucentia Tech

USA . 900 parts In-Stock

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Assy Fe

Spain . 390 parts In-Stock

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Corohmni

South Africa . 367 parts In-Stock

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UHIMA Technologies

Türkiye . 153 parts In-Stock

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Overview

Discover the power of the BD788 by Onsemi, a high-quality Power Bipolar Junction Transistor (BJT) that provides unrivaled performance for switching applications. With its PNP polarity and single configuration, this transistor is perfect for a wide range of electronic devices. Manufactured by Onsemi, a trusted name in the industry, you can trust in the reliability and durability of the BD788. Its plastic/epoxy package body material ensures long-lasting protection. Offering a maximum collector-emitter voltage of 60V and a maximum collector current of 4A, this transistor delivers exceptional power capabilities. Experience the benefits of the BD788 today and unlock new levels of efficiency and performance in your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product's plastic/epoxy package body material ensures durability and shock resistance, making it suitable for demanding applications.

Polarity or Channel Type: PNP

The PNP polarity or channel type allows for easy integration with other PNP-compatible devices, providing flexibility in circuit designs.

Configuration: SINGLE

With a single configuration, this power BJT simplifies circuit design and reduces component count, making it a cost-effective choice.

Transistor Application: SWITCHING

Designed specifically for switching applications, this power BJT offers fast switching speeds, allowing for efficient control and management of high power signals.

Package Shape: RECTANGULAR

The rectangular package shape of this power BJT makes it compatible with standard PCB layouts, facilitating straightforward integration into existing designs.

Terminal Form: THROUGH-HOLE

Featuring a through-hole terminal form, this power BJT offers secure and reliable electrical connections, making it suitable for applications requiring robust connectivity.

No. of Elements: 1

With a single element, this power BJT simplifies circuit design and reduces complexity, enhancing overall system efficiency.

No. of Terminals: 3

The three terminals of this power BJT enable convenient interfacing with other components, ensuring easy integration into various circuit configurations.

Maximum Power Dissipation (Abs): 15 W

The high maximum power dissipation of 15 W enhances this power BJT's ability to handle high power loads and prevents overheating, ensuring excellent performance and reliability.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for efficient heat dissipation and mechanical stability, ensuring optimal performance even in demanding operating conditions.

Minimum DC Current Gain (hFE): 5

The minimum DC current gain of 5 ensures reliable amplification and control of current flows, enhancing the overall performance of this power BJT.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this power BJT exhibits excellent thermal stability, making it suitable for use in high-temperature environments.

Maximum Collector-Emitter Voltage: 60 V

The high maximum collector-emitter voltage of 60 V enables this power BJT to handle high-voltage applications effectively, enhancing its versatility and suitability for a wide range of circuit designs.

Transistor Element Material: SILICON

Made from silicon, a widely used semiconductor material, this power BJT offers superior performance in terms of speed, power handling, and temperature characteristics.

Maximum Collector Current (IC): 4 A

With a maximum collector current of 4 A, this power BJT can effectively handle high currents, enabling it to drive various loads with ease.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides excellent solderability and corrosion resistance, ensuring reliable and long-lasting connections in diverse operating environments.

Terminal Position: SINGLE

Featuring a single terminal position, this power BJT simplifies PCB layout and enables easy mounting and soldering, enhancing overall assembly efficiency.

Peak Reflow Temperature °C: 235

The high peak reflow temperature of 235°C allows for efficient soldering during assembly, ensuring strong and reliable connections between the power BJT and other components.

Nominal Transition Frequency (fT): 50 MHz

With a high nominal transition frequency of 50 MHz, this power BJT delivers excellent high-frequency performance, making it ideal for applications requiring fast signal switching and amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD788 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-225

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD788 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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