Loading...

BD789

Onsemi

BD789 by Onsemi

The Onsemi BD789 is a NPN BJT transistor with 80V VCE, 4A IC, and 40MHz fT. Ideal for switching applications, it has a single configuration in a plastic/epoxy package with through-hole terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,927 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,927

-

-

-

-

ABC Electronics Ltd.

UK . 1,132 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,132

-

-

-

-

Vyrian

USA . 776 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

776

-

-

-

-

ComSIT Distribution GmbH

Germany . 530 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

530

-

-

-

-

J2 Sourcing AB

Sweden . 53 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

53

-

-

-

-

GES GmbH

Germany . 25 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

25

-

-

-

-

ECAB

Sweden . 3 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3

-

-

-

-

LittleDiode

UK . 2 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 413 parts In-Stock

1+ parts

$11.800

100+ parts

-

1k+ parts

-

10k+ parts

-

413

$11.800

-

-

-

Northwest PG Solutions

USA . 1,362 parts In-Stock

1+ parts

$12.980

100+ parts

$11.682

1k+ parts

-

10k+ parts

-

1,362

$12.980

$11.682

-

-

Problanco Electronics

Mexico . 5,765 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,765

-

-

-

-

Kulean Microsystems

USA . 4,063 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,063

-

-

-

-

TANS Electronics

Latvia . 3,551 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,551

-

-

-

-

Corphita

USA . 2,342 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,342

-

-

-

-

SupplyDigital Components

Austria . 2,110 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,110

-

-

-

-

Corohmni

South Africa . 392 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

392

-

-

-

-

UHIMA Technologies

Türkiye . 211 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

211

-

-

-

-

Overview

Unleash the power of innovation with the Onsemi BD789, a high-quality Power Bipolar Junction Transistor designed for switching applications. Manufactured by Onsemi, a trusted name in semiconductor technology, this NPN transistor offers unrivaled performance and reliability. With a maximum collector-emitter voltage of 80V and a nominal transition frequency of 40MHz, the BD789 is ideal for a wide range of electronic projects. Whether you're a hobbyist or a professional, this transistor delivers exceptional value, efficiency, and flexibility to meet your needs. Upgrade your designs with the Onsemi BD789 and experience next-level performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight option for packaging, providing protection to the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications.

Configuration: SINGLE

Simpler design and easier to use for various applications.

Transistor Application: SWITCHING

Ideal for applications that require effective switching of currents.

No. of Terminals: 3

Simplified connection setup with only three terminals to work with.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting in various electronic devices.

Maximum Collector-Emitter Voltage: 80 V

Suitable for medium to high voltage applications.

Maximum Collector Current (IC): 4 A

Capable of handling higher current loads for efficient operation.

Nominal Transition Frequency (fT): 40 MHz

Allows for fast switching transitions and high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD789 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD789 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 10