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BD780

Onsemi

BD780 by Onsemi

The Onsemi BD780 is a PNP BJT with Darlington configuration, built-in diode, and resistor. Ideal for switching applications with 4A max collector current, 80V max collector-emitter voltage, and 15W power dissipation. Features include 750 min hFE, 20MHz fT, and operating temp up to 150 °C.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 1,584 parts In-Stock

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Digiode

USA . 1,160 parts In-Stock

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LittleDiode

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Native Components

USA . 67 parts In-Stock

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$14.178

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Northwest PG Solutions

USA . 2,337 parts In-Stock

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$14.037

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TANS Electronics

Latvia . 7,825 parts In-Stock

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SupplyDigital Components

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Kepictronics

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Kulean Microsystems

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Problanco Electronics

Mexico . 2,575 parts In-Stock

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UHIMA Technologies

Türkiye . 838 parts In-Stock

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Corphita

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Corohmni

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Overview

Experience the next level of power management with the BD780 by Onsemi. This high-quality Power Bipolar Junction Transistor (BJT) offers unmatched reliability and performance for a variety of switching applications. With a maximum power dissipation of 15W and a maximum collector-emitter voltage of 80V, this PNP Darlington transistor provides exceptional functionality. Its built-in diode and resistor make installation a breeze, while its compact rectangular package shape ensures easy integration. Trust Onsemi's reputation for excellence and choose the BD780 for all your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

Allows for easy integration in PNP transistor circuits and systems.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Offers enhanced performance and convenience with integrated diode and resistor.

Transistor Application: SWITCHING

Designed for efficient switching applications, ensuring reliable performance.

Package Shape: RECTANGULAR

Provides a compact and efficient form factor for easy installation and integration.

Terminal Form: THROUGH-HOLE

Enables secure and reliable connections in through-hole mounting applications.

Maximum Power Dissipation (Abs): 15 W

Can handle high power dissipation, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Allows for easy mounting and installation in various setups.

Minimum DC Current Gain (hFE): 750

Provides high current gain for efficient amplification in circuits.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures, suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 80 V

Can handle high voltage levels, increasing the versatility of the transistor.

Transistor Element Material: SILICON

Offers reliability and efficiency in transistor operation.

Maximum Collector Current (IC): 4 A

Can handle high collector currents for various applications.

Terminal Finish: TIN LEAD

Provides a reliable terminal finish for secure connections.

Terminal Position: SINGLE

Simplifies installation and connection with a single terminal position.

Nominal Transition Frequency (fT): 20 MHz

Offers high transition frequency for fast switching speeds and performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD780 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD780 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-367-5819, 5961013675819

NIIN

013675819

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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