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BD787G

Onsemi

BD787G by Onsemi

The Onsemi BD787G is a NPN BJT transistor with 60V VCEO, 4A IC, and 15W Ptot. Ideal for switching applications, it has a min hFE of 5 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$0.730

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,683 parts In-Stock

1+ parts

$1.020

100+ parts

$0.417

1k+ parts

$0.293

10k+ parts

$0.249

1,683

$1.020

$0.417

$0.293

$0.249

Mouser Electronics

USA . 638 parts In-Stock

1+ parts

$1.180

100+ parts

$0.484

1k+ parts

$0.377

10k+ parts

-

638

$1.180

$0.484

$0.377

-

DigiKey

USA . 526 parts In-Stock

1+ parts

$1.180

100+ parts

$0.486

1k+ parts

$0.342

10k+ parts

$0.261

526

$1.180

$0.486

$0.342

$0.261

Newark

USA . 1,483 parts In-Stock

1+ parts

$1.290

100+ parts

$0.590

1k+ parts

$0.418

10k+ parts

$0.395

1,483

$1.290

$0.590

$0.418

$0.395

Element14

Singapore . 1,683 parts In-Stock

1+ parts

$1.720

100+ parts

$0.700

1k+ parts

$0.451

10k+ parts

$0.419

1,683

$1.720

$0.700

$0.451

$0.419

Chip1Stop

Japan . 3,499 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.315

10k+ parts

$0.282

3,499

-

-

$0.315

$0.282

Avnet

USA . 2,500 parts In-Stock

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-

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2,500

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Arrow

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.276

10k+ parts

$0.244

1,000

-

-

$0.276

$0.244

EBV Elektronik

Germany . 1,000 parts In-Stock

1+ parts

-

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1,000

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-

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RS (Exports)

UK . 600 parts In-Stock

1+ parts

-

100+ parts

$0.439

1k+ parts

$0.322

10k+ parts

$0.302

600

-

$0.439

$0.322

$0.302

Verical

USA . 499 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.422

10k+ parts

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499

-

-

$0.422

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Rochester

USA . 398 parts In-Stock

1+ parts

-

100+ parts

$0.343

1k+ parts

$0.285

10k+ parts

$0.254

398

-

$0.343

$0.285

$0.254

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,085 parts In-Stock

1+ parts

$0.267

100+ parts

-

1k+ parts

-

10k+ parts

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2,085

$0.267

-

-

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Nova Conductors

Japan . 92 parts In-Stock

1+ parts

$0.350

100+ parts

-

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92

$0.350

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VNN

France . 2,503 parts In-Stock

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2,503

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Vyrian

USA . 1,527 parts In-Stock

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1,527

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NAC Semi

USA . 1,000 parts In-Stock

1+ parts

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$1.300

10k+ parts

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1,000

-

-

$1.300

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Holdelec - ElecDif-Pro

France . 400 parts In-Stock

1+ parts

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400

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ACDS - Activité Composants Distribution Service

France . 400 parts In-Stock

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400

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 290 parts In-Stock

1+ parts

$0.247

100+ parts

-

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290

$0.247

-

-

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Corphita

USA . 1,626 parts In-Stock

1+ parts

$0.253

100+ parts

-

1k+ parts

-

10k+ parts

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1,626

$0.253

-

-

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Argo Parts USA

USA . 3,429 parts In-Stock

1+ parts

$0.350

100+ parts

-

1k+ parts

-

10k+ parts

$0.340

3,429

$0.350

-

-

$0.340

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.350

100+ parts

$0.343

1k+ parts

-

10k+ parts

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50

$0.350

$0.343

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Ampacity Inc.

Singapore . 1,576 parts In-Stock

1+ parts

$0.450

100+ parts

-

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10k+ parts

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1,576

$0.450

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Continental Prestige Electronics

USA . 702 parts In-Stock

1+ parts

$0.751

100+ parts

$0.466

1k+ parts

$0.267

10k+ parts

$0.239

702

$0.751

$0.466

$0.267

$0.239

Perfect Parts

USA . 21,230 parts In-Stock

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21,230

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QUARKTWIN TECHNOLOGY LTD

USA . 17,109 parts In-Stock

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Microchip USA

USA . 10,960 parts In-Stock

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10,960

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Kulean Microsystems

USA . 7,145 parts In-Stock

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7,145

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A-Z Elektronik GmbH

Germany . 6,720 parts In-Stock

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6,720

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Problanco Electronics

Mexico . 5,210 parts In-Stock

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5,210

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Glotronic Ltd.

UK . 4,959 parts In-Stock

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4,959

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Kepictronics

USA . 4,740 parts In-Stock

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4,740

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Alle Elektronik GmbH

Germany . 4,480 parts In-Stock

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4,480

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SupplyDigital Components

Austria . 3,828 parts In-Stock

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3,828

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TANS Electronics

Latvia . 2,641 parts In-Stock

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2,641

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Eastek

USA . 1,500 parts In-Stock

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1,500

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Authorized Procurement Solutions

USA . 800 parts In-Stock

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800

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UHIMA Technologies

Türkiye . 736 parts In-Stock

1+ parts

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736

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GreenTree Electronics

Israel . 24 parts In-Stock

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24

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Overview

Unleash the power of innovation with the BD787G by Onsemi, a high-quality Power Bipolar Junction Transistor designed for switching applications. Manufactured with precision and expertise by Onsemi, this NPN transistor offers unparalleled performance and reliability. With a maximum power dissipation of 15W and a maximum collector current of 4A, the BD787G provides superior functionality in a variety of electronic devices. Trust Onsemi to deliver cutting-edge technology that exceeds your expectations. Elevate your projects with the BD787G and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection, ensuring the transistor's durability in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile in different circuit designs.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance and reliable operation in such scenarios.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into circuit boards, saving space and ensuring a compact design.

No. of Terminals: 3

Three terminals provide the necessary connections for the transistor to function properly in a circuit.

Maximum Power Dissipation (Abs): 15 W

With a high maximum power dissipation of 15W, this transistor can handle high power loads without overheating, ensuring reliable performance.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for easy and secure mounting, enhancing stability and reliability in various applications.

Minimum DC Current Gain (hFE): 5

A minimum DC current gain of 5 ensures the transistor can amplify input signals efficiently, making it suitable for amplification applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperature environments, ensuring stable performance even in challenging conditions.

Maximum Collector-Emitter Voltage: 60 V

With a high maximum collector-emitter voltage of 60V, this transistor can handle high voltage applications without breakdown, ensuring reliability and safety.

Transistor Element Material: SILICON

Silicon material provides good thermal conductivity and stability, ensuring reliable performance and longevity of the transistor.

Maximum Collector Current (IC): 4 A

A maximum collector current of 4A allows the transistor to handle high current loads, making it suitable for power switching applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and solderability, ensuring secure connections and reliable operation of the transistor.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and integration, making it easier to use in various applications.

Nominal Transition Frequency (fT): 50 MHz

With a high nominal transition frequency of 50MHz, this transistor can switch signals quickly and efficiently, making it suitable for high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD787G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-225

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD787G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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