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AX50311-1-WD1

Onsemi

AX50311-1-WD1 by Onsemi

AX50311-1-WD1 by Onsemi is a CMOS telecom IC with 3V supply voltage, 2 Mbps data rate, and industrial temperature grade. It is used in telecom circuits for applications requiring a surface mount unencased chip package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,203 parts In-Stock

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Digiode

USA . 1,534 parts In-Stock

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1,534

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Distributors (Availability)

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AZTECH Wire

Italy . 702 parts In-Stock

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$19.460

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702

$19.460

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Native Components

USA . 136 parts In-Stock

1+ parts

$374.281

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$366.796

1k+ parts

$363.053

10k+ parts

$359.310

136

$374.281

$366.796

$363.053

$359.310

Northwest PG Solutions

USA . 1,534 parts In-Stock

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$411.709

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$411.709

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Kulean Microsystems

USA . 7,437 parts In-Stock

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7,437

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TANS Electronics

Latvia . 7,015 parts In-Stock

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SupplyDigital Components

Austria . 6,931 parts In-Stock

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Problanco Electronics

Mexico . 1,823 parts In-Stock

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Corphita

USA . 1,287 parts In-Stock

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UHIMA Technologies

Türkiye . 803 parts In-Stock

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Corohmni

South Africa . 190 parts In-Stock

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Overview

Experience seamless connectivity and reliable performance with the AX50311-1-WD1 by Onsemi. As a trusted industry leader, Onsemi delivers superior quality products that exceed expectations. Perfect for a wide range of applications in the telecom industry, this IC offers unparalleled value and benefits to customers. Stay ahead of the competition with the innovative technology and advanced features of the AX50311-1-WD1, providing you with the edge you need to succeed in today's fast-paced market.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and efficient implementation on circuit boards, saving space and reducing assembly time.

Package Style (Meter): UNCASED CHIP

The unencased chip design provides flexibility in terms of integration and customization, allowing for specific application requirements to be met.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures that the product can withstand harsh environmental conditions and operate reliably in various settings.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature indicates that the product can function effectively even in cold environments without any performance issues.

Terminal Position: UPPER

The upper terminal position makes it convenient for connecting external components and interfaces, ensuring ease of accessibility during installation and maintenance.

Temperature Grade: INDUSTRIAL

Being rated for industrial temperature ranges, this product is suitable for use in demanding applications where reliability under extreme conditions is crucial.

Technology: CMOS

Complementary metal-oxide-semiconductor (CMOS) technology ensures low power consumption, high speed operation, and reliable performance, making it ideal for telecom interface applications.

Terminal Form: NO LEAD

The no-lead terminal form eliminates the risk of solder joints cracking or breaking, improving the product's overall durability and reliability.

Telecom IC Type: TELECOM CIRCUIT

Designed specifically for telecom circuits, this product offers optimized functionality and performance for telecommunications applications, ensuring seamless connectivity and communication.

Nominal Supply Voltage: 3 V

Operating at a nominal supply voltage of 3V, this product is compatible with standard power sources, offering energy efficiency and consistent performance.

Data Rate: 2 Mbps

With a data rate of 2 Mbps, this product is capable of handling high-speed data transmission, making it suitable for applications requiring fast and reliable communication.

Technical Specifications

Other Function Telecom Interface ICs AX50311-1-WD1 attributes and parameters. Explore more Other Function Telecom Interface ICs devices from Onsemi

Specs

Additional Features:

DATA RATE 350 KBPS FOR FSK,MODULATION

Data Rate:

2 Mbps

JESD-30 Code:

X-XUUC-N

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

DIE

Package Equivalence Code:

DIE OR CHIP

Package Shape:

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Form:

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

AX50311-1-WD1 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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