Loading...

PMBFJ310,215

NXP Semiconductors

PMBFJ310,215 by NXP Semiconductors

PMBFJ310,215 by NXP Semiconductors is an N-CHANNEL RF FET for AMPLIFIER applications. It operates in DEPLETION MODE with a 25V DS Breakdown Voltage and 2.5pF Feedback Capacitance at a max power dissipation of 0.25W in a SMALL OUTLINE package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,331 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,331

-

-

-

-

Digiode

USA . 3,861 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,861

-

-

-

-

Anansix

USA . 1,692 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,692

-

-

-

-

Prism Electronics

USA . 241 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

241

-

-

-

-

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 203 parts In-Stock

1+ parts

$10.050

100+ parts

-

1k+ parts

-

10k+ parts

-

203

$10.050

-

-

-

AZTECH Wire

Italy . 747 parts In-Stock

1+ parts

$19.400

100+ parts

-

1k+ parts

-

10k+ parts

-

747

$19.400

-

-

-

One Stop Electronics

USA . 859 parts In-Stock

1+ parts

$65.050

100+ parts

-

1k+ parts

-

10k+ parts

-

859

$65.050

-

-

-

Perfect Parts

USA . 5,998 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,998

-

-

-

-

UNI Independent Distributors

Spain . 1,672 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,672

-

-

-

-

Corphita

USA . 1,553 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,553

-

-

-

-

Aranea Global

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Microchip USA

USA . 190 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

190

-

-

-

-

Overview

Elevate your RF amplifier performance with the PMBFJ310,215 by NXP Semiconductors. As a leading manufacturer in the industry, NXP ensures top-notch quality and reliability in their products. This N-CHANNEL single configuration transistor is designed for very high-frequency applications, making it ideal for amplifiers. With a maximum power dissipation of 0.25 W and a breakdown voltage of 25 V, this transistor offers unmatched value and performance to customers seeking superior RF small signal FETs. Upgrade your amplifier design with the PMBFJ310,215 and experience unparalleled results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material for ease of handling and long-lasting performance.

Polarity or Channel Type: N-CHANNEL

Provides efficient amplification in N-Channel circuits.

Configuration: SINGLE

Simplified design for straightforward integration into electronic circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplification applications in electronic devices.

Surface Mount: YES

Easily mountable on circuit boards for convenient installation.

Minimum DS Breakdown Voltage: 25 V

Can handle up to 25 volts without breakdown, ensuring stable operation in various applications.

Field Effect Transistor Technology: JUNCTION

Utilizes junction technology for efficient transistor operation in amplification circuits.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without overheating, ensuring reliability in demanding conditions.

Maximum Power Dissipation (Abs): 0.25 W

Capable of dissipating power efficiently to prevent overheating and ensure stable performance.

Maximum Feedback Capacitance (Crss): 2.5 pF

Low feedback capacitance for improved stability and performance in high-frequency applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) PMBFJ310,215 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Configuration:

Minimum DS Breakdown Voltage:

25 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

2.5 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PMBFJ310,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20