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MMBR901LT1

NXP Semiconductors

MMBR901LT1 by NXP Semiconductors

NXP Semiconductors' MMBR901LT1 is a NPN RF BJT transistor with 15V VCE, 0.03A IC, and 1pF CCB. Ideal for S Band applications, it's a single configuration amplifier in a small outline package suitable for surface mount technology.

Median Price

$0.316

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

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Freelance Electronics

USA . 34,182 parts In-Stock

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$0.253

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$0.266

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$0.250

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$0.253

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Component Electronics Inc.

Canada . 20,500 parts In-Stock

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$0.380

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$0.290

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$0.250

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$0.380

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First Choice Components Inc.

USA . 12,200 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 11,095 parts In-Stock

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Bristol Electronics

USA . 8,967 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 5,864 parts In-Stock

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Vyrian

USA . 4,981 parts In-Stock

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Digiode

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EMSNET

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PC Components Company LLC

USA . 3,503 parts In-Stock

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Atlantic Semiconductor

USA . 3,000 parts In-Stock

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Anansix

USA . 2,059 parts In-Stock

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Prism Electronics

USA . 1,826 parts In-Stock

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Connector Distribution Corp

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Right Parts Inc.

USA . 1,222 parts In-Stock

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Nova Conductors

Japan . 35 parts In-Stock

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NexGen Digital

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One Stop Electronics

USA . 2,344 parts In-Stock

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$54.050

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

UK . 11,095 parts In-Stock

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Glotronic Ltd.

UK . 8,876 parts In-Stock

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UNI Independent Distributors

Spain . 5,997 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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Kepictronics

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Corphita

USA . 2,012 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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Assy Fe

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Overview

Enhance your RF signal amplification with the MMBR901LT1 by NXP Semiconductors. Crafted with precision and expertise, this NPN transistor offers unparalleled performance in S BAND applications. Its small outline package and gull wing terminals make it a versatile choice for amplifiers, ensuring superior signal quality and reliability. Trust NXP Semiconductors to deliver top-notch quality and innovation with every product, providing you with the competitive edge you need in the fast-paced world of RF technology. Elevate your designs with the MMBR901LT1 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, making it suitable for various operating conditions.

Polarity or Channel Type: NPN

The NPN polarity makes it compatible with many electronic circuits and allows for easy integration into existing systems.

Configuration: SINGLE

The single configuration simplifies the design and implementation of the transistor in circuits, making it easier to use.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor is optimized for delivering high-performance signal amplification.

Surface Mount: YES

Being surface mountable, this transistor is suitable for compact and densely populated PCB designs, saving space and facilitating automated assembly.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space on a circuit board and easy alignment during assembly.

Terminal Form: GULL WING

The gull-wing terminal form provides mechanical strength and easy soldering, ensuring a reliable connection in the circuit.

Highest Frequency Band: S BAND

With a high-frequency band rating of S band, this transistor is suitable for applications requiring high-speed signal processing and transmission.

No. of Terminals: 3

Having 3 terminals allows for versatile connectivity options and configurations in different circuit designs.

Package Style (Meter): SMALL OUTLINE

The small-outline package style saves space on the PCB and ensures a compact overall design for the electronic system.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments and extended use.

Maximum Collector-Base Capacitance: 1 pF

The low collector-base capacitance of 1 pF minimizes the risk of signal distortion and interference, ensuring clean signal amplification.

Maximum Collector-Emitter Voltage: 15 V

The maximum collector-emitter voltage of 15V allows for safe operation within specified voltage ranges without risking damage to the transistor.

Transistor Element Material: SILICON

The use of silicon as the transistor element material provides good performance characteristics, reliability, and compatibility with various circuit designs.

Maximum Collector Current (IC): 0.03 A

With a maximum collector current of 0.03 A, this transistor can handle moderate current loads in amplifier applications.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit connection and enables different circuit configurations, enhancing usability and versatility.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MMBR901LT1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

S BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MMBR901LT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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