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MMBR901LT3

Freescale Semiconductor

MMBR901LT3 by Freescale Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .03 A; Terminal Form: GULL WING;

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Anansix

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One Stop Electronics

USA . 1,949 parts In-Stock

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UNI Independent Distributors

Spain . 1,926 parts In-Stock

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Corphita

USA . 85 parts In-Stock

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Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MMBR901LT3 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Freescale Semiconductor

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

50

Highest Frequency Band:

S BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MMBR901LT3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Freescale Semiconductor

On December 7, 2015, NXP completed the merger with Freescale Semiconductor; the merged company continued its operation as NXP Semiconductors N.V.

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