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BF908WR-TAPE-13

NXP Semiconductors

BF908WR-TAPE-13 by NXP Semiconductors

BF908WR-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 12V, operates in dual gate depletion mode, and supports ultra-high frequency bands. This surface-mount transistor ensures efficient performance with a compact design.

Median Price

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3

In-Stock Inventory

1k+

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Vyrian

USA . 4,597 parts In-Stock

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Anansix

USA . 1,673 parts In-Stock

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Digiode

USA . 647 parts In-Stock

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One Stop Electronics

USA . 234 parts In-Stock

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$24.050

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UNI Independent Distributors

Spain . 6,112 parts In-Stock

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Northwest PG Solutions

USA . 1,747 parts In-Stock

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Corphita

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Native Components

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Overview

Experience unparalleled performance with the BF908WR-TAPE-13 from NXP Semiconductors, a trusted leader in innovative technology. This high-quality RF Small Signal FET combines superior reliability and efficiency, perfect for amplifying signals in ultra-high frequency applications. Designed for seamless integration in compact spaces, it ensures optimal functionality while minimizing energy loss. Elevate your projects with a trusted solution that delivers exceptional value and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy in the package material offers excellent durability and resistance to environmental factors, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally provide better electron mobility and lower on-resistance, making them efficient for amplification applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode provides extra protection and allows for simplified circuit design, enhancing reliability in applications.

Transistor Application: AMPLIFIER

Designed for amplification, this FET is ideal for enhancing signal strength in audio and RF applications.

Surface Mount: YES

Surface mounting enables compact designs and automated production, making the FET suitable for modern electronics.

Minimum DS Breakdown Voltage: 12 V

A minimum breakdown voltage of 12V ensures the FET can withstand high voltages while maintaining reliable operation.

Package Shape: RECTANGULAR

The rectangular package shape facilitates easy integration into PCB layouts, optimizing space usage.

Terminal Form: GULL WING

Gull wing terminals provide excellent soldering properties and mechanical stability in surface-mount applications.

Operating Mode: DUAL GATE, DEPLETION MODE

Dual gate operation allows for better control over the device's performance, ideal for specific applications requiring fine-tuning.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Being suitable for ultra-high frequency applications makes this FET perfect for advanced RF communication systems.

No. of Terminals: 4

With 4 terminals, this FET allows for versatile circuit configurations and functionalities in various electronic designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style means a smaller footprint, making it easier to design compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology ensures high efficiency and low power consumption, which is essential for battery-operated devices.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this FET can function reliably in demanding environments without failure.

Transistor Element Material: SILICON

Silicon is a well-established semiconductor material that offers stability and performance across a wide range of applications.

Maximum Drain Current (ID): 0.04 A

This maximum drain current rating is suitable for a variety of low-power applications, giving designers flexibility in usage.

Terminal Position: DUAL

Dual terminal positioning allows for efficient heat dissipation and improved performance in compact designs.

Case Connection: SOURCE

Source case connection enables straightforward integration into circuit designs, ensuring ease of assembly.

Maximum Feedback Capacitance (Crss): 0.045 pF

A low feedback capacitance is advantageous for high-frequency applications, ensuring minimal signal distortion and loss.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF908WR-TAPE-13 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Case Connection:

SOURCE

Minimum DS Breakdown Voltage:

12 V

Maximum Drain Current (ID):

.04 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

.045 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DUAL GATE, DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF908WR-TAPE-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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