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BCX51-16,135

NXP Semiconductors

BCX51-16,135 by NXP Semiconductors

BCX51-16,135 by NXP Semiconductors is a PNP Power BJT with 45V VCEO and 1A IC. It has a hFE of 100, ideal for amplifier applications. This transistor comes in a small outline package and can operate up to 150°C, making it suitable for various electronic designs.

Median Price

$0.062

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 130,000 parts In-Stock

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-

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$0.062

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$0.051

10k+ parts

$0.046

130,000

-

$0.062

$0.051

$0.046

Farnell

UK . 130,000 parts In-Stock

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$0.053

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$0.053

Verical

USA . 114,000 parts In-Stock

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$0.077

114,000

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$0.077

EBV Elektronik

Germany . 4,000 parts In-Stock

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4,000

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Chip1Stop

Japan . 4,000 parts In-Stock

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$0.063

4,000

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$0.063

Distributors (In-Stock)

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Flip Electronics

USA . 52,000 parts In-Stock

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$0.014

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$0.014

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Digiode

USA . 1,179 parts In-Stock

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$0.048

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1,179

$0.048

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Nova Conductors

Japan . 1,000 parts In-Stock

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$0.118

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$0.118

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Chip Stock

USA . 138,000 parts In-Stock

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138,000

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NAC Semi

USA . 32,000 parts In-Stock

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$0.089

32,000

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$0.089

VNN

France . 4,691 parts In-Stock

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4,691

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Vyrian

USA . 4,077 parts In-Stock

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Anansix

USA . 2,423 parts In-Stock

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ComSIT Distribution GmbH

Germany . 95 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 54,408 parts In-Stock

1+ parts

$0.043

100+ parts

$0.042

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$0.042

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54,408

$0.043

$0.042

$0.042

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Corphita

USA . 2,277 parts In-Stock

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$0.046

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2,277

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AZTECH Wire

Italy . 12,765 parts In-Stock

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$0.060

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$0.060

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Ampacity Inc.

Singapore . 54,897 parts In-Stock

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$0.094

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54,897

$0.094

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Aranea Global

USA . 1,000 parts In-Stock

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$0.116

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$0.111

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1,000

$0.116

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$0.111

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Argo Parts USA

USA . 555 parts In-Stock

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$0.118

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$0.115

555

$0.118

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$0.115

Corohmni

South Africa . 221 parts In-Stock

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$0.507

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$0.507

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Aztec Data Supply Inc.

USA . 2,396 parts In-Stock

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$1.935

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2,396

$1.935

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GreenTree Electronics

Israel . 164,000 parts In-Stock

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Continental Prestige Electronics

USA . 130,000 parts In-Stock

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$0.079

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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Supply Digital

USA . 881 parts In-Stock

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UNI Independent Distributors

Spain . 615 parts In-Stock

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Overview

Discover the BCX51-16,135 by NXP Semiconductors, a high-quality Power Bipolar Junction Transistor perfect for amplifier applications. With NXP's reputation for excellence in semiconductor manufacturing, this PNP transistor offers superior performance and reliability. Its small outline package and maximum power dissipation of 1.3W make it ideal for compact designs where space is a premium. Whether you're an electronics hobbyist or a professional engineer, the BCX51-16,135 provides the value and benefits you need to bring your projects to life. Experience the difference with NXP Semiconductors.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and protection for the transistor, making it suitable for various applications and environments.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into circuits where PNP transistors are required, enhancing compatibility and functionality.

Configuration: SINGLE

The single configuration simplifies circuit design and assembly, making it user-friendly and cost-effective.

Transistor Application: AMPLIFIER

Designed for amplifier applications, this transistor offers reliable and efficient amplification of signals, making it ideal for audio and RF applications.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on PCBs, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR

The rectangular package shape provides a standard form factor for easy integration into existing circuit designs and layouts.

No. of Terminals: 3

With three terminals, this transistor offers flexibility in connection and circuit configuration, enabling versatile usage in different circuit designs.

Maximum Power Dissipation (Abs): 1.3 W

The high maximum power dissipation allows for reliable operation under varying load conditions, ensuring stability and longevity of the transistor.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it suitable for compact electronic devices and applications with size constraints.

Minimum DC Current Gain (hFE): 100

The high minimum DC current gain ensures consistent and predictable performance in amplification applications, offering reliable signal amplification.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance, making it suitable for high-temperature environments.

Maximum Collector-Emitter Voltage: 45 V

The high maximum collector-emitter voltage rating provides a safety margin for the transistor to handle higher voltage levels, enhancing reliability and protection against voltage spikes.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability of the transistor, offering stable operation over a wide temperature range and ensuring long-term functionality.

Maximum Collector Current (IC): 1 A

The high maximum collector current capability allows the transistor to handle higher current loads without overheating or failing, ensuring reliable and efficient operation.

Terminal Finish: TIN

The tin terminal finish provides good solderability and conductivity, facilitating easy and reliable soldering during assembly processes.

Terminal Position: SINGLE

With a single terminal position, this transistor simplifies PCB layout and connection, ensuring ease of integration and reducing the risk of errors during assembly.

Case Connection: COLLECTOR

The case connection at the collector terminal offers efficient heat dissipation and allows for easy mounting on heat sinks, enhancing thermal management and reliability.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature ensures proper soldering and reflow processes, preventing damage to the transistor during assembly and ensuring reliable connections.

Peak Reflow Temperature °C: 260

The high peak reflow temperature enables safe and effective soldering processes, ensuring reliable connections and preventing solder defects that could affect performance.

Nominal Transition Frequency (fT): 50 MHz

With a high nominal transition frequency, this transistor is capable of handling high-frequency signal amplification, making it suitable for applications that require high-speed operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCX51-16,135 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-243

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCX51-16,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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