Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BCX51-16,135 by NXP Semiconductors is a PNP Power BJT with 45V VCEO and 1A IC. It has a hFE of 100, ideal for amplifier applications. This transistor comes in a small outline package and can operate up to 150°C, making it suitable for various electronic designs.
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The plastic/epoxy body material provides durability and protection for the transistor, making it suitable for various applications and environments.
The PNP polarity allows for easy integration into circuits where PNP transistors are required, enhancing compatibility and functionality.
The single configuration simplifies circuit design and assembly, making it user-friendly and cost-effective.
Designed for amplifier applications, this transistor offers reliable and efficient amplification of signals, making it ideal for audio and RF applications.
Being surface mountable allows for easy and convenient installation on PCBs, saving space and facilitating automated assembly processes.
The rectangular package shape provides a standard form factor for easy integration into existing circuit designs and layouts.
With three terminals, this transistor offers flexibility in connection and circuit configuration, enabling versatile usage in different circuit designs.
The high maximum power dissipation allows for reliable operation under varying load conditions, ensuring stability and longevity of the transistor.
The small outline package style saves space on the PCB, making it suitable for compact electronic devices and applications with size constraints.
The high minimum DC current gain ensures consistent and predictable performance in amplification applications, offering reliable signal amplification.
With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance, making it suitable for high-temperature environments.
The high maximum collector-emitter voltage rating provides a safety margin for the transistor to handle higher voltage levels, enhancing reliability and protection against voltage spikes.
Silicon material ensures high performance and reliability of the transistor, offering stable operation over a wide temperature range and ensuring long-term functionality.
The high maximum collector current capability allows the transistor to handle higher current loads without overheating or failing, ensuring reliable and efficient operation.
The tin terminal finish provides good solderability and conductivity, facilitating easy and reliable soldering during assembly processes.
With a single terminal position, this transistor simplifies PCB layout and connection, ensuring ease of integration and reducing the risk of errors during assembly.
The case connection at the collector terminal offers efficient heat dissipation and allows for easy mounting on heat sinks, enhancing thermal management and reliability.
The maximum time at peak reflow temperature ensures proper soldering and reflow processes, preventing damage to the transistor during assembly and ensuring reliable connections.
The high peak reflow temperature enables safe and effective soldering processes, ensuring reliable connections and preventing solder defects that could affect performance.
With a high nominal transition frequency, this transistor is capable of handling high-frequency signal amplification, making it suitable for applications that require high-speed operation.
Power Bipolar Junction Transistors (BJT) BCX51-16,135 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
BCX51-16,135 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.75
SB
8541.29.00.80
PCN Packaging - Mult Dev Carrier Tape Chg 16/Feb/2020 All Dev Label Chgs 2/Aug/2020
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
SMBJ18CA
Multicomp Pro
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Diode Element Material: SILICON; Technology: AVALANCHE; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V;
MBRS3200T3G
Onsemi
MBRS3200T3G by Onsemi is a Schottky rectifier diode with a max output current of 3A and a max forward voltage of 0.59V. It operates in temperatures ranging from -65°C to 175°C, making it suitable for power applications. The diode has a peak repetitive reverse voltage of 200V and is designed for surface mount installation in electronic circuits.
MS3V-T1R32.768KHZ+/-20PPM12.5PF
Golledge Electronics
MS3V-T1R32.768KHZ+/-20PPM12.5PF by Golledge Electronics is a crystal oscillator with 20 ppm frequency tolerance, 126% stability, and 12.5 pF load capacitance. It is ideal for applications requiring precise timing in temperature-sensitive environments due to its -40 to 85 °C operating range.
BAT54SLT1G
BAT54SLT1G by Onsemi is a fast recovery Schottky diode with 2 elements in series connected configuration. It has a max reverse recovery time of 0.005 us and a max forward voltage of 0.8 V. Ideal for applications requiring high-speed rectification, it operates b/w -55 to 150 °C and can handle a max output current of 0.2 A.
2N7002,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
LM107H
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Code: TO-99; Package Shape: ROUND;
Weitron Technology
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/58-360
TE Connectivity
TE Connectivity's M39029/58-360 is a CRIMP terminal backshell for 22-28 AWG wires, rated at 5A. Ideal for male contacts in Mil-Spec applications, it offers a cross-section area of 0.34 mm2 and ensures secure connections in demanding environments.
SS14
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS84-7-F
Diodes Incorporated
Diodes Inc. BSS84-7-F is a P-channel FET with 50V DS breakdown voltage, 0.13A max drain current, and 10 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode at up to 150°C, it has Gull Wing terminals and matte tin finish.
BAV99
Panasonic
MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Continental Device India
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-236AB;
LM358AN
Fairchild Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
LL4148
General Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Electronic Devices
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
ULN2803A
Allegro MicroSystems
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 85 Cel; Terminal Form: THROUGH-HOLE;
BSS123,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; No. of Terminals: 3; Maximum Time At Peak Reflow Temperature (s): 30;
LM358M
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
1N4148
Philips Components
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Changzhou Starsea Electronics
JAN2N3055
Cobham Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Minimum DC Current Gain (hFE): 20; Package Shape: ROUND;
TIP111
Taitron Components
NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: SINGLE;
BD243C
Bourns
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A; JESD-30 Code: R-PSFM-T3;
TIP42A
Microsemi
PNP; Surface Mount: NO; Maximum Collector Current (IC): 6 A; JESD-609 Code: e0; Package Style (Meter): FLANGE MOUNT; Terminal Position: SINGLE;
TIP42C
STMicroelectronics
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP41C
Rectron
NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
MJD45H11T4
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;
MJD127T4
Motorola
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 8 A; Maximum VCEsat: 4 V;
MJE340
Nte Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PSFM-W3;
ULN2004AN
Texas Instruments
ULN2004AN by Texas Instruments is a NPN BJT with 7 elements and 16 terminals. It has a max VCEsat of 1.6V, IC of 0.5A, and VCE of 50V. Ideal for switching applications due to its complex configuration and silicon transistor element material.
TIP3055
TIP3055 by Texas Instruments is a NPN BJT transistor with max. power dissipation of 100W, max. collector current of 15A, and max. operating temp of 150°C. Ideal for switching applications due to its single configuration and through-hole terminal form in a rectangular package style.
D44H11
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
BDW93C
Samsung
NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 12 A; Package Body Material: PLASTIC/EPOXY;
BUV48A
New Jersey Semiconductor Products
NPN; Configuration: SINGLE; Maximum Collector Current (IC): 15 A; No. of Elements: 1; Maximum Collector-Emitter Voltage: 450 V; Transistor Element Material: SILICON;
2N3055
Micro Commercial Components
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Collector Current (IC): 10 A; Package Body Material: METAL;
NPN; Surface Mount: NO; Maximum Collector Current (IC): 6 A; JESD-609 Code: e0; Terminal Finish: TIN LEAD; Package Body Material: PLASTIC/EPOXY;
JANTXV2N3055
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; No. of Elements: 1; No. of Terminals: 2;
TIP50
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
MC1413BDR2G
MC1413BDR2G by Onsemi is a NPN BJT transistor with 1000 min hFE. It operates up to 150°C, handles 50V max collector-emitter voltage, and supports switching applications. The package is small outline with 16 terminals in gull wing form for surface mount assembly.
BD140
PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER;
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BCX5616TA
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;
BCX5616QTA
Diodes Inc.'s BCX5616QTA is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 100, and IC of 1A. With a max operating temp of 150°C, it's ideal for automotive electronics conforming to AEC-Q101 standards.
BCX5316TA
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;
BCX56-16
Secos
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1.2 W; Maximum Collector Current (IC): 1 A;
Central Semiconductor
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): 1.2 W; Maximum Collector Current (IC): 1 A;
Diotec Semiconductor Ag
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;
BCX5316H6327XTSA1
Infineon Technologies
Infineon's BCX5316H6327XTSA1 is a PNP BJT with 2W power dissipation, hFE of 100, and IC of 1A. Ideal for surface mount applications, it operates up to 150°C making it suitable for power management in various electronic devices.
BCX5610TA
BCX5610TA by Diodes Inc. is a NPN BJT transistor for switching applications. It has a VCEsat of 0.5V, hFE of 63, and can handle up to 1A collector current. With a max operating temperature of 150°C, it is suitable for high-power switching circuits in various electronic devices.
BCX5616TC
BCX5616TC by Diodes Inc. is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 100, and IC of 1A. With a max operating temp of 150°C, it's ideal for power management in compact electronic devices.
BCX53-16
Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 1.3 W; Maximum Collector Current (IC): 1 A;
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 1.3 W; Maximum Collector Current (IC): 1 A;
BCX5516TA
BCX5516TA by Diodes Inc. is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 100, and IC of 1A. Ideal for power management in small outline packages with max temp of 150°C.
BCX51-16,115
NXP Semiconductors
BCX51-16,115 by NXP Semiconductors is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 45V and a max collector current of 1A. It is commonly used as an amplifier in various applications.
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): 1 A; Maximum Collector-Emitter Voltage: 45 V;
BCX56TA
BCX56TA by Diodes Inc. is a NPN BJT transistor with VCEsat of 0.5V, hFE of 25, and IC of 1A. Ideal for switching applications, it operates b/w -55 to 150°C with a max VCE of 80V. Its small outline package makes it suitable for surface mount designs.
BCX5316-13R
BCX5316-13R by Diodes Inc. is a PNP BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 100, and IC of 1A. With a max operating temp of 150°C, it has a collector-emitter voltage of 80V and transition frequency of 150MHz.
BCX5416TA
BCX5516H6327XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;
BCX56-10TX
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 155 MHz; Maximum Power Dissipation (Abs): 1.1 W; Maximum Collector Current (IC): 1 A;
BCX51-16
BCX51-16 by NXP is a PNP BJT transistor with 1W power dissipation, hFE of 100, and 45V collector-emitter voltage. Ideal for amplifier applications, it has a small outline package style and operates up to 150°C.
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