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3SK242-T1VAB

Nec Electronics

3SK242-T1VAB by Nec Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G4; Operating Mode: DUAL GATE, DEPLETION MODE; Package Style (Meter): SMALL OUTLINE;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 52 parts In-Stock

1+ parts

$106.230

100+ parts

-

1k+ parts

-

10k+ parts

$101.981

52

$106.230

-

-

$101.981

Northwest PG Solutions

USA . 341 parts In-Stock

1+ parts

$116.853

100+ parts

-

1k+ parts

-

10k+ parts

-

341

$116.853

-

-

-

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 3SK242-T1VAB attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Nec Electronics

Specs

Case Connection:

SOURCE

Configuration:

Maximum Drain Current (ID):

.025 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

.08 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DUAL GATE, DEPLETION MODE

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.25 W

Minimum Power Gain (Gp):

21 dB

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

3SK242-T1VAB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

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