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J112D27Z

National Semiconductor

J112D27Z by National Semiconductor

J112D27Z by National Semiconductor is a N-CHANNEL FET with 50 ohm RDS(on), ideal for SWITCHING applications. It features DEPLETION MODE operation, SILICON element material, and THROUGH-HOLE terminals in a CYLINDRICAL package.

Median Price

$0.231

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Mouser Electronics

USA . 3,261 parts In-Stock

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$0.600

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$0.236

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$0.160

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$0.112

3,261

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$0.236

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$0.112

DigiKey

USA . 19,774 parts In-Stock

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$0.640

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$0.252

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$0.170

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$0.130

19,774

$0.640

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Verical

USA . 12,000 parts In-Stock

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$0.231

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$0.128

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Master Electronics

USA . 12,000 parts In-Stock

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$0.197

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$0.109

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Rochester

USA . 12 parts In-Stock

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$0.132

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$0.110

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$0.098

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Digiode

USA . 2,421 parts In-Stock

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Vyrian

USA . 1,459 parts In-Stock

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Flip Electronics

USA . 38,000 parts In-Stock

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IBS Electronics

USA . 12,000 parts In-Stock

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$0.276

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$0.153

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NexGen Digital

USA . 2,643 parts In-Stock

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Anansix

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Nova Conductors

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Ampacity Inc.

Singapore . 18,142 parts In-Stock

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$0.092

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Corphita

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Corohmni

South Africa . 366 parts In-Stock

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Component Stockers USA

USA . 757 parts In-Stock

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$0.370

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$0.160

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iodParts Technologies Inc.

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SupplyDigital Components

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Netroflash

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Supply Digital

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 450 parts In-Stock

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Overview

Enhance your electronic projects with the J112D27Z by National Semiconductor. As a leading manufacturer in the industry, National Semiconductor ensures top-notch quality and reliability in their small signal field effect transistors. This N-channel transistor is perfect for switching applications, offering superior performance in a single configuration. With a maximum drain-source resistance of 50 ohms, this transistor provides excellent value and benefits to customers looking for high-quality components for their projects. Upgrade your circuits with the J112D27Z and experience the difference National Semiconductor can make in your electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and lower cost, making this FET a cost-effective solution.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance characteristics compared to P-channel FETs, offering faster switching speeds and lower on-resistance.

Configuration: SINGLE

Single configuration FETs are easier to work with and simplify circuit design, making them ideal for applications requiring simplicity.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers efficient and reliable operation when used in switching circuits.

Package Shape: ROUND

The round package shape allows for easy handling and installation, making it suitable for applications where space is limited.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and are easy to solder, ensuring reliable performance and ease of assembly.

Operating Mode: DEPLETION MODE

Depletion-mode operation allows for better control over the FET's behavior, making it suitable for applications that require precise voltage control.

No. of Terminals: 3

Having 3 terminals allows for easy connectivity and integration into existing circuits, reducing complexity in setup and installation.

Package Style (Meter): CYLINDRICAL

The cylindrical package style ensures a compact form factor and easy integration into various electronic devices and applications.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers high switching speeds and low off-state leakage current, providing efficient performance in switching applications.

Transistor Element Material: SILICON

Silicon-based FETs offer high reliability and performance, making them a popular choice for a wide range of electronic applications.

Maximum Drain-Source On Resistance: 50 ohm

The low on-resistance of 50 ohms ensures minimal power loss and high efficiency in switching applications, making this FET an excellent choice for power-sensitive designs.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting on PCBs and offers better thermal characteristics, ensuring stable performance under varying operating conditions.

Technical Specifications

Small Signal Field Effect Transistors (FET) J112D27Z attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from National Semiconductor

Specs

Configuration:

Maximum Drain-Source On Resistance:

50 ohm

Field Effect Transistor Technology:

JUNCTION

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

J112D27Z Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

National Semiconductor

National Semiconductor was an American semiconductor manufacturer which specialized in analog devices and subsystems, formerly with headquarters in Santa Clara, California. The company produced power management integrated circuits, display drivers, audio and operational amplifiers, communication interface products and data conversion solutions. National's key markets included wireless handsets, displays and a variety of broad electronics markets, including medical, automotive, industrial and test and measurement applications.On September 23, 2011, the company formally became part of Texas Instruments as the "Silicon Valley" division.

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