Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
J112RLRP by Onsemi is a N-CHANNEL FET with 50 ohm RDS(on) and 5 pF Crss. Ideal for CHOPPER applications, it operates in DEPLETION MODE at up to 150 °C. The THROUGH-HOLE package has a CYLINDRICAL shape made of PLASTIC/EPOXY material.
Median Price
-
Lifecycle Status
Suppliers In-Stock
2
In-Stock Inventory
1k+
Digiode
1+ parts
100+ parts
1k+ parts
10k+ parts
Vyrian
Problanco Electronics
Kulean Microsystems
SupplyDigital Components
TANS Electronics
Corphita
Corohmni
UHIMA Technologies
Plastic/epoxy material provides good insulation and protection for the transistor, ensuring reliable performance and longevity.
N-channel transistors generally have better performance characteristics and lower on-resistance compared to P-channel transistors, making them a preferred choice for many applications.
Single configuration simplifies circuit design and integration, making it easier to use in different applications.
Choppers are used for various power electronics applications, making this transistor suitable for high frequency and high power applications.
Round package shape allows for efficient heat dissipation and compact design, making it suitable for space-constrained applications.
Through-hole terminals provide strong mechanical connection and easy soldering, ensuring reliable connection in various circuits.
Depletion mode operation offers simple biasing schemes and can provide higher transconductance, making it suitable for low noise amplification.
3 terminals allow for easy connections in a circuit, providing flexibility in design and integration.
Cylindrical package style provides good mechanical strength and ease of handling, making it suitable for various applications.
Junction FET technology offers high input impedance and low noise performance, making it suitable for signal processing applications.
High maximum operating temperature allows for reliable operation in harsh environments and high power applications.
Silicon material offers good thermal conductivity and high electron mobility, ensuring efficient performance and reliability.
Tin lead terminal finish provides good solderability and reliable electrical connection, ensuring long-term performance.
Low drain-source on resistance allows for efficient power dissipation and low power losses, making it suitable for high power applications.
Bottom terminal position allows for easy PCB mounting and good heat dissipation, ensuring reliable operation in various applications.
Low feedback capacitance helps in reducing signal distortions and improving high frequency performance, making it suitable for high-speed applications.
Small Signal Field Effect Transistors (FET) J112RLRP attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi
Configuration:
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Qualification:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
J112RLRP Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
1N4148
Nte Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
PAP-06V-S
J S T Mfg
PAP-06V-S by J S T Mfg is a 6-contact BOARD CONNECTOR with 94V-0 UL Flammability Code. It has FEMALE contacts, CRIMP termination, and comes WITH CABLE ASSEMBLY for CABLE mounting applications.
SMBJ18CA
Semitron
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;
1N4148WT
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
0460-202-16141
TE Connectivity
TE Connectivity's 0460-202-16141 contact features a crimp terminal type, machined contact design, and rated AC voltage of 1500V. With a wire gauge range of 20-16 AWG, it is ideal for applications requiring a male round pin-socket contact style in assembly products.
FDN5618P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
RC0402JR-070RL
Yageo
Yageo's RC0402JR-070RL is a SMT fixed resistor with 0 ohm resistance, rated for temperatures from -55 to 155 °C. It features METAL GLAZE/THICK FILM tech, WRAPAROUND terminals, and 0.0625 W power dissipation. Ideal for jumper applications in electronics requiring compact surface mount components.
Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 100 V; Config: SINGLE; No. of Phases: 1; No. of Elements: 1;
BAV99
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ERJU06F10R0V
Panasonic
ERJU06F10R0V by Panasonic is an 0805 size SMT fixed resistor with a resistance of 10 ohm and 1% tolerance. It operates b/w -55 to 155 °C, suitable for AEC-Q200 standards in automotive applications due to its high temperature coefficient of 100 ppm/°C. With a max operating voltage of 150 V and power dissipation of 0.125 W, it is ideal for surface mounting type.
M39029/56-351
Amphenol
CONNECTOR ACCESSORY; Minimum Operating Temperature: -65 Cel; Additional Features: STANDARD: MIL-DTL-38999; Contact Gender: FEMALE; MIL-Connector Accessory Name: CONTACT; Associated Military - Specifications: MIL-DTL-38999;
Daco Semiconductor
SS14
Panjit International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Sun Wai Electronic
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Reverse Recovery Time: .004 us; Maximum Repetitive Peak Reverse Voltage: 100 V;
Synsemi
CRCW040210K0FKED
Vishay Intertechnology
Vishay Intertechnology's CRCW040210K0FKED is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.063 W power dissipation. Ideal for surface mount applications in electronics due to its compact SMT package style and high operating temperature range of -55 to 155 °C.
LM317T
Sgs-ates Componenti Electronici S P A
Other Regulators; No. of Terminals: 3; JESD-609 Code: e0; Terminal Position: SINGLE; Adjustability: ADJUSTABLE; Maximum Load Regulation (%): 1.5 %;
ESD5Z5.0T1G
Onsemi
ESD5Z5.0T1G by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 5V reverse test voltage and 174W peak power dissipation. It is used for transient suppression in electronic circuits, meeting IEC-61000-4-2, 4-4 standards and UL recognized for reliability.
FDN327N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .46 W; No. of Terminals: 3; Maximum Drain-Source On Resistance: .07 ohm;
BSS84P-E6327
Infineon Technologies
BSS84P-E6327 by Infineon Technologies is a P-CHANNEL FET with 60V DS breakdown voltage, 0.17A max drain current, and 8 ohm max on resistance. Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology.
NDS332P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1;
LND150N3-GP002
Microchip Technology
LND150N3-GP002 by Microchip is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. Operating in depletion mode, it has a max ID of 0.03A and RDS(on) of 1000Ω. With a temp range of -55 to 150°C, this transistor features a built-in diode and low Crss for efficient performance.
BSS123
Micro Commercial Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Minimum DS Breakdown Voltage: 100 V; Qualification: Not Qualified;
BSS84
Siemens
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Drain-Source On Resistance: 10 ohm; Terminal Finish: Tin/Lead (Sn/Pb);
SIS443DN-T1-GE3
Vishay Intertechnology's SIS443DN-T1-GE3 is a P-CHANNEL FET with 40V DS Breakdown Voltage. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE. With -55 to 150 °C operating temperature range, this transistor has 0.035A ID and 0.0117 ohm Drain-Source On Resistance.
FDN302P
FDN302P by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 2.4A and 0.055 ohm Drain-Source Resistance, operating in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C.
BSS123NH6327XTSA1
Infineon BSS123NH6327XTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.19A ID, and 6 ohm RDS(on). Ideal for small outline applications requiring high drain current and low on-resistance. AEC-Q101 compliant for automotive use.
SI2328DS-T1-E3
SI2328DS-T1-E3 by Vishay Intertechnology is a N-CHANNEL FET with 100V DS Breakdown Voltage, 1.15A Drain Current, and 0.25 ohm On Resistance. Ideal for small signal applications in electronics due to its ENHANCEMENT MODE operation, GULL WING terminals, and compact SMALL OUTLINE package style.
FDN339AN
Onsemi's FDN339AN is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 3A Drain Current, 0.035 ohm On Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and PLASTIC/EPOXY body, it's designed for surface mount in small outline packages.
SI2301CDS-T1-E3
Vishay Intertechnology's SI2301CDS-T1-E3 is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 3.1A Drain Current, 0.112 ohm On Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 1.6W and operating temperature up to 150°C, it is suitable for various electronic designs requiring high performance in compact spaces.
2N7002
Samsung
N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 3;
FDC638P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Maximum Drain-Source On Resistance: .048 ohm; Terminal Position: DUAL;
SN7002WH6327XTSA1
Infineon Technologies' SN7002WH6327XTSA1 is a small signal N-channel FET with a min DS breakdown voltage of 60V. It features a single configuration with built-in diode and operates in enhancement mode. This surface mount transistor, made of silicon, has a max drain current of 0.23A and a max drain-source on resistance of 5 ohm. It is commonly used in automotive applications due to its AEC-Q101 reference standard and moisture sensitivity level of 1.
ZXMP6A13FTA
Diodes Incorporated
ZXMP6A13FTA by Diodes Inc. is a P-CHANNEL FET with 60V DS Breakdown Voltage, 1.1A Drain Current, and 0.4 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with ENHANCEMENT MODE operation up to 150°C.
BSS138
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;
2N7002KT7G
2N7002KT7G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.32A ID, and 1.6 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Features include PLASTIC/EPOXY body, GULL WING terminals, and -55 to 150 °C temp range.
ZXMS6004FFQTA
ZXMS6004FFQTA by Diodes Inc. is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.6 ohm RDS(on), and -40 to 150 °C operating temp. Ideal for SWITCHING applications in automotive (AEC-Q101) due to ENHANCEMENT MODE tech and built-in diode.
FDN358P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain Current (Abs) (ID): 1.5 A; Maximum Time At Peak Reflow Temperature (s): 30;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
J112-D26Z
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; JESD-30 Code: O-PBCY-T3; Qualification: Not Qualified;
J112D26Z
National Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; No. of Terminals: 3; Field Effect Transistor Technology: JUNCTION;
J112_D26Z
J112_D26Z by Fairchild Semiconductor is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a max power dissipation of 0.4W and max drain-source on resistance of 50Ω. Ideal for SWITCHING applications due to its low feedback capacitance of 5pF.
J112
Calogic
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Qualification: Not Qualified; No. of Terminals: 3;
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Maximum Feedback Capacitance (Crss): 5 pF; Maximum Drain-Source On Resistance: 50 ohm;
Central Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; JESD-30 Code: O-PBCY-T3; Transistor Application: SWITCHING;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: Matte Tin (Sn) - annealed;
Inter F E T
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Qualification: Not Qualified; JESD-30 Code: O-PBCY-T3;
Motorola
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Package Style (Meter): CYLINDRICAL; Maximum Feedback Capacitance (Crss): 5 pF;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Terminals: 3; No. of Elements: 1;
Micro Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Transistor Element Material: SILICON; Terminal Form: WIRE;
Solitron Devices
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; JESD-609 Code: e0; Maximum Feedback Capacitance (Crss): 4 pF;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Terminals: 3; JESD-609 Code: e1;
Linear Integrated Systems
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; Qualification: Not Qualified; Operating Mode: DEPLETION MODE;
Allegro MicroSystems
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Package Shape: ROUND; Package Style (Meter): CYLINDRICAL;
New Jersey Semiconductor Products
N-CHANNEL; Configuration: SINGLE; Operating Mode: DEPLETION MODE; No. of Elements: 1; Transistor Element Material: SILICON; Field Effect Transistor Technology: JUNCTION;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Qualification: Not Qualified; Package Shape: ROUND;
J112G
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Terminal Finish: TIN SILVER COPPER; No. of Terminals: 3;
J112-D74Z
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Package Shape: ROUND; Maximum Feedback Capacitance (Crss): 5 pF;
J112-D27Z
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; JESD-30 Code: O-PBCY-T3; Maximum Drain-Source On Resistance: 50 ohm;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved