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J112ZL1

Onsemi

J112ZL1 by Onsemi

J112ZL1 by Onsemi is a N-CHANNEL FET with 50 ohm RDS(on) and 5 pF Crss. Ideal for CHOPPER applications, it operates in DEPLETION MODE at up to 150 °C. This SINGLE configuration transistor has a CYLINDRICAL package with THROUGH-HOLE terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,265 parts In-Stock

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Digiode

USA . 755 parts In-Stock

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755

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Kulean Microsystems

USA . 7,127 parts In-Stock

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7,127

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TANS Electronics

Latvia . 6,052 parts In-Stock

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Problanco Electronics

Mexico . 4,649 parts In-Stock

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Corphita

USA . 1,343 parts In-Stock

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SupplyDigital Components

Austria . 284 parts In-Stock

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Corohmni

South Africa . 231 parts In-Stock

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UHIMA Technologies

Türkiye . 58 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality J112ZL1 from Onsemi. As a leading manufacturer in the industry, Onsemi provides reliable and innovative solutions for small signal field-effect transistors. The J112ZL1 offers exceptional performance in chopper applications, making it a versatile choice for a wide range of projects. With its N-channel configuration and depletion mode operation, this transistor delivers superior functionality and efficiency. Trust Onsemi to deliver products that exceed your expectations and bring value to your designs. Upgrade your electronics today with the J112ZL1 from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the transistor, ensuring reliable performance and longevity.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally have better electron mobility and lower resistance compared to P-channel transistors, making them suitable for high-speed applications.

Configuration: SINGLE

Single configuration is simple and easy to use, making it ideal for basic chopper applications.

Transistor Application: CHOPPER

Specifically designed for chopper applications, ensuring optimized performance and efficiency in chopping circuits.

Package Shape: ROUND

Round package shape allows for easy mounting and installation in applications where space is limited or irregular.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections and easy soldering, enhancing the reliability of the transistor in various circuits.

Operating Mode: DEPLETION MODE

Depletion mode operation allows for better control over the transistor's conductance, providing flexibility in designing circuit configurations.

No. of Terminals: 3

Three terminals offer the necessary connections for input, output, and control signals, making it suitable for simple circuit designs.

Package Style (Meter): CYLINDRICAL

Cylindrical package style enhances heat dissipation and allows for efficient thermal management in high-power applications.

Field Effect Transistor Technology: JUNCTION

Junction technology provides good switching characteristics and low leakage currents, ensuring reliable operation in various circuit applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable operation in harsh environments or high-temperature applications.

Transistor Element Material: SILICON

Silicon material offers good thermal conductivity and high breakdown voltage, ensuring stable performance under different operating conditions.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and corrosion resistance, ensuring long-term reliability in various operating environments.

Maximum Drain-Source On Resistance: 50 ohm

Low maximum drain-source on resistance minimizes power loss and improves efficiency in circuit applications with high current requirements.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and enables easy integration into existing circuit designs, saving space and reducing assembly time.

Maximum Feedback Capacitance (Crss): 5 pF

Low maximum feedback capacitance reduces signal distortion and improves high-frequency response, making it suitable for fast-switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) J112ZL1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Configuration:

Maximum Drain-Source On Resistance:

50 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

5 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

CHOPPER

Transistor Element Material:

SILICON

Trade Compliance

J112ZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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