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J112RLRM

Onsemi

J112RLRM by Onsemi

J112RLRM by Onsemi is a N-CHANNEL FET with 50 ohm RDS(on) and 5 pF Crss. Ideal for CHOPPER applications, it operates in DEPLETION MODE at up to 150 °C. Its THROUGH-HOLE terminals and CYLINDRICAL package make it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,898 parts In-Stock

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Vyrian

USA . 173 parts In-Stock

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TANS Electronics

Latvia . 2,009 parts In-Stock

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Corphita

USA . 1,963 parts In-Stock

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Kulean Microsystems

USA . 1,446 parts In-Stock

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SupplyDigital Components

Austria . 1,334 parts In-Stock

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Problanco Electronics

Mexico . 653 parts In-Stock

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Corohmni

South Africa . 102 parts In-Stock

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UHIMA Technologies

Türkiye . 90 parts In-Stock

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Overview

Looking for a high-quality Small Signal Field Effect Transistor (FET) for your chopper applications? Look no further than the J112RLRM by Onsemi. With a single N-channel configuration and operating in depletion mode, this FET offers reliable performance in a variety of electronic circuits. Its junction technology and silicon element material ensure optimal functionality, while its through-hole terminals make installation a breeze. Trust Onsemi for top-notch components that deliver value and efficiency to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, ensuring reliability and longevity.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility, making them efficient for many applications.

Configuration: SINGLE

Simplifies circuit design and reduces complexity.

Transistor Application: CHOPPER

Designed specifically for chopper applications, ensuring optimal performance in such systems.

Package Shape: ROUND

Round shape makes it easier to mount and handle in various applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections and are easy to solder.

Operating Mode: DEPLETION MODE

Depletion mode transistors can switch off current flow completely, offering more control over power consumption.

No. of Terminals: 3

Simple and efficient 3-terminal design for easy integration into circuits.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers good thermal dissipation and compact size.

Field Effect Transistor Technology: JUNCTION

Junction FET technology provides high input impedance and low output impedance, improving overall performance.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a wide range of environments.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability compared to other materials.

Terminal Finish: TIN LEAD

Tin lead finish ensures good solderability and protection against corrosion.

Maximum Drain-Source On Resistance: 50 ohm

Low on-resistance leads to lower power dissipation and better efficiency.

Terminal Position: BOTTOM

Bottom terminal position makes it easier to mount and solder onto PCBs.

Maximum Feedback Capacitance (Crss): 5 pF

Low feedback capacitance minimizes signal distortion and improves high-frequency performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) J112RLRM attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain-Source On Resistance:

50 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

5 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

CHOPPER

Transistor Element Material:

SILICON

Trade Compliance

J112RLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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