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J112RLRA

Onsemi

J112RLRA by Onsemi

J112RLRA by Onsemi is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a Max Power Dissipation of 0.4W and Max Drain-Source On Resistance of 50 ohm. Ideal for CHOPPER applications due to its SILICON element material and PLASTIC/EPOXY package body material.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,451 parts In-Stock

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Digiode

USA . 2,401 parts In-Stock

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Kulean Microsystems

USA . 6,693 parts In-Stock

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Problanco Electronics

Mexico . 6,597 parts In-Stock

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SupplyDigital Components

Austria . 6,130 parts In-Stock

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TANS Electronics

Latvia . 1,898 parts In-Stock

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Corphita

USA . 875 parts In-Stock

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875

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UHIMA Technologies

Türkiye . 514 parts In-Stock

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Corohmni

South Africa . 190 parts In-Stock

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Perfect Parts

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Overview

Elevate your electronic designs with the J112RLRA from Onsemi, a top-tier manufacturer known for quality and innovation. As a member of the Small Signal Field Effect Transistors (FET) category, this N-CHANNEL transistor offers exceptional performance in chopper applications. With its depletion mode operation and low on resistance, customers can trust in the reliability and efficiency of this product. Experience the benefits of precision engineering and cutting-edge technology with the J112RLRA, a game-changer for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

Offers efficient current flow and low on-resistance compared to P-channel transistors.

Configuration: SINGLE

Simplified design and easy integration into circuit systems.

Transistor Application: CHOPPER

Ideal for use in chopper circuits for efficient power control.

Maximum Power Dissipation (Abs): 0.4 W

Capable of handling moderate power levels without overheating.

Field Effect Transistor Technology: JUNCTION

Provides high switching speeds and low power dissipation for efficient performance.

Maximum Operating Temperature: 150 °C

Can operate effectively in environments with high temperatures.

Maximum Drain-Source On Resistance: 50 ohm

Low resistance ensures minimal power loss and efficient power delivery.

Maximum Feedback Capacitance (Crss): 5 pF

Low feedback capacitance minimizes signal distortion and improves overall performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) J112RLRA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain-Source On Resistance:

50 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

5 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

CHOPPER

Transistor Element Material:

SILICON

Trade Compliance

J112RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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