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CM50TF-12H

Mitsubishi Electric

CM50TF-12H by Mitsubishi Electric

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 50 A; Nominal Turn Off Time (toff): 500 ns;

Median Price

$110.250

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Forefront Electronics and Design

USA . 1 parts In-Stock

1+ parts

$110.250

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1

$110.250

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ACDS - Activité Composants Distribution Service

France . 102 parts In-Stock

1+ parts

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102

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Huijzer Components

Netherlands . 2 parts In-Stock

1+ parts

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2

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Fibra_Brandt Electronic GMBH

Germany . 1 parts In-Stock

1+ parts

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 270 parts In-Stock

1+ parts

$1.050

100+ parts

$0.956

1k+ parts

$0.861

10k+ parts

-

270

$1.050

$0.956

$0.861

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Microchip USA

USA . 483 parts In-Stock

1+ parts

$57.500

100+ parts

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483

$57.500

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) CM50TF-12H attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Mitsubishi Electric

Specs

Additional Features:

SUPER FAST RECOVERY

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-D17

No. of Elements:

6

No. of Terminals:

17

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

SOLDER LUG

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

500 ns

Nominal Turn On Time (ton):

500 ns

Maximum VCEsat:

2.8 V

Trade Compliance

CM50TF-12H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Mitsubishi Electric

We, the Mitsubishi Electric Group, will contribute to the realization of a vibrant and sustainable society through continuous technological innovation and ceaseless creativity, as a leader in the manufacture and sales of electric and electronic equipment used in Energy and Electric Systems, Industrial Automation, Information and Communication Systems, Electronic Devices, and Home Appliances.

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