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APT25GT120BRDQ2G

Microsemi

APT25GT120BRDQ2G by Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 347 W; Maximum Collector Current (IC): 54 A; JEDEC-95 Code: TO-247;

Median Price

$8.230

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

< 1k

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 88 parts In-Stock

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$8.230

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$6.675

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88

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Mouser Electronics

USA . 41 parts In-Stock

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$8.230

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$7.090

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41

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Verical

USA . 14 parts In-Stock

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TME

Poland . 54 parts In-Stock

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$15.440

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54

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ComSIT Distribution GmbH

Germany . 403 parts In-Stock

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403

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ComSIT USA

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Fibra_Brandt Electronic GMBH

Germany . 20 parts In-Stock

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$1.700

100+ parts

$1.547

1k+ parts

$1.394

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1,000

$1.700

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Microchip USA

USA . 2,644 parts In-Stock

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$23.044

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2,644

$23.044

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Fulton Briggs Corp.

USA . 5,036 parts In-Stock

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5,036

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Glotronic Ltd.

UK . 4,100 parts In-Stock

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Perfect Parts

USA . 939 parts In-Stock

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939

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) APT25GT120BRDQ2G attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Microsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

30 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

186 ns

Nominal Turn On Time (ton):

41 ns

Trade Compliance

APT25GT120BRDQ2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Microsemi

Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California.

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