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MT25QL02GCBB8E12-0AUT

Micron Technology

MT25QL02GCBB8E12-0AUT by Micron Technology

Micron Technology's MT25QL02GCBB8E12-0AUT is a 256MX8 NOR flash memory with 133 MHz clock frequency, suitable for automotive applications. It operates at 3V, offers 100000 write/erase cycles, and has a serial SPI interface. With -40 to 125 °C operating temperature range, it provides reliable data storage in compact GRID ARRAY package.

Median Price

$43.792

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 1,122 parts In-Stock

1+ parts

$24.530

100+ parts

$24.530

1k+ parts

-

10k+ parts

-

1,122

$24.530

$24.530

-

-

Mouser Electronics

USA . 370 parts In-Stock

1+ parts

$29.030

100+ parts

$23.980

1k+ parts

-

10k+ parts

-

370

$29.030

$23.980

-

-

Farnell

UK . 154 parts In-Stock

1+ parts

$58.555

100+ parts

$49.543

1k+ parts

-

10k+ parts

-

154

$58.555

$49.543

-

-

Element14

Singapore . 40 parts In-Stock

1+ parts

$309.140

100+ parts

-

1k+ parts

-

10k+ parts

-

40

$309.140

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,975 parts In-Stock

1+ parts

$28.700

100+ parts

-

1k+ parts

-

10k+ parts

-

1,975

$28.700

-

-

-

Nova Conductors

Japan . 26 parts In-Stock

1+ parts

$41.545

100+ parts

-

1k+ parts

-

10k+ parts

-

26

$41.545

-

-

-

Chip Stock

USA . 15,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,700

-

-

-

-

Vyrian

USA . 597 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

597

-

-

-

-

NexGen Digital

USA . 7 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 239 parts In-Stock

1+ parts

$24.040

100+ parts

-

1k+ parts

-

10k+ parts

-

239

$24.040

-

-

-

Corphita

USA . 383 parts In-Stock

1+ parts

$27.189

100+ parts

-

1k+ parts

-

10k+ parts

-

383

$27.189

-

-

-

Continental Prestige Electronics

USA . 252 parts In-Stock

1+ parts

$38.460

100+ parts

-

1k+ parts

-

10k+ parts

-

252

$38.460

-

-

-

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$41.545

100+ parts

$40.714

1k+ parts

-

10k+ parts

-

1,000

$41.545

$40.714

-

-

Argo Parts USA

USA . 4,956 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,956

-

-

-

-

Overview

Upgrade your automotive electronics with the MT25QL02GCBB8E12-0AUT by Micron Technology. This flash memory device offers exceptional quality and reliability, backed by Micron's reputation as a leading manufacturer in the industry. Ideal for a wide range of automotive applications, this NOR type memory provides 256Mx8 organization and 100,000 write/erase cycles, ensuring long-lasting performance. With a compact package style and low power consumption, this memory IC is the perfect solution for automotive systems that require high-speed data storage and retrieval. Experience the value and benefits of Micron's cutting-edge technology with the MT25QL02GCBB8E12-0AUT.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and reliability for the flash memory product.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster and more efficient data transfer, enhancing performance.

Nominal Supply Voltage / Vsup (V): 3

The 3V supply voltage ensures compatibility with a wide range of systems and devices.

Output Characteristics: 3-STATE

The 3-state output allows for high-speed data transfer with low power consumption.

Minimum Operating Temperature: -40 °C

The flash memory product can operate in extreme cold temperatures, making it suitable for various applications.

Write Protection: HARDWARE/SOFTWARE

The option for both hardware and software write protection adds an extra layer of security to the data stored in the flash memory.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the flash memory energy-efficient and reliable.

Endurance: 100000 Write/Erase Cycles

With a high endurance level, the flash memory product ensures long-lasting performance and reliability for frequent read and write operations.

Technical Specifications

Flash Memory MT25QL02GCBB8E12-0AUT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Boot Block:

BOTTOM/TOP

Maximum Clock Frequency (fCLK):

133 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PBGA-B24

Length:

8 mm

Memory Density:

2147483648 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA24,5X5,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Programming Voltage (V):

3

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.0005 Amp

Maximum Supply Current:

85 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Type:

NOR TYPE

Width:

6 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

MT25QL02GCBB8E12-0AUT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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