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APT45GP120JDQ2

Microchip Technology

APT45GP120JDQ2 by Microchip Technology

Microchip Technology's APT45GP120JDQ2 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 75A max collector current. It has a built-in diode, 230ns turn-off time, and 329W power dissipation. Ideal for power control applications requiring fast switching speeds and high voltage handling capabilities.

Median Price

$74.583

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Master Electronics

USA . 15 parts In-Stock

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$56.970

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$38.500

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15

$56.970

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Verical

USA . 25 parts In-Stock

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$92.196

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$53.177

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25

$92.196

$53.177

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IBS Electronics

USA . 25 parts In-Stock

1+ parts

$103.056

100+ parts

$63.617

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25

$103.056

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Vyrian

USA . 7,581 parts In-Stock

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Nova Conductors

Japan . 450 parts In-Stock

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J & M Industries LLC

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Aztec Data Supply Inc.

USA . 276 parts In-Stock

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$0.710

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276

$0.710

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AZTECH Wire

Italy . 664 parts In-Stock

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$9.086

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$9.086

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Ampacity Inc.

Singapore . 1,129 parts In-Stock

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$20.050

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$20.050

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Corohmni

South Africa . 11 parts In-Stock

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$39.078

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Semicontronic

India . 1,176 parts In-Stock

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$43.050

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$41.974

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$41.758

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$43.050

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Microchip USA

USA . 9,646 parts In-Stock

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$99.383

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$99.383

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Marpe Global Electronics

Taiwan . 7,636 parts In-Stock

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XL Components Corporation

Australia . 6,985 parts In-Stock

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QualityLine Systems

Poland . 6,397 parts In-Stock

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Continental Prestige Electronics

USA . 4,090 parts In-Stock

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Glotronic Ltd.

UK . 3,300 parts In-Stock

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Aranea Global

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Authorized Procurement Solutions

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Argo Parts USA

USA . 979 parts In-Stock

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979

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Perfect Parts

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Overview

Upgrade your power control systems with the APT45GP120JDQ2 insulated gate bipolar transistor from Microchip Technology. Designed for high-performance applications, this N-channel transistor offers a single configuration with a built-in diode, ensuring efficient power management. With a maximum collector-emitter voltage of 1200V and a maximum power dissipation of 329W, this transistor is perfect for a wide range of industrial and automotive applications. Trust in the quality and reliability of Microchip Technology to enhance the performance of your power control systems.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lower cost and lightweight material compared to metal, making the product more affordable and easy to handle.

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs have faster switching speeds and higher input impedance, making them suitable for high-frequency applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode allows for simplified circuit design and protection against reverse current flow.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring efficient and reliable performance.

Maximum Power Dissipation (Abs): 329 W

High power dissipation capability allows the transistor to handle demanding power levels without overheating.

Maximum Collector-Emitter Voltage: 1200 V

High breakdown voltage ensures the transistor can withstand high voltages, making it suitable for power control applications.

Maximum Collector Current (IC): 75 A

High collector current rating allows the transistor to handle large currents, making it suitable for power control applications.

Nominal Turn Off Time (toff): 230 ns

Fast turn-off time reduces switching losses and improves efficiency in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) APT45GP120JDQ2 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Microchip Technology

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

30 V

JESD-30 Code:

R-PUFM-X4

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

230 ns

Nominal Turn On Time (ton):

47 ns

Trade Compliance

APT45GP120JDQ2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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