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IXYK120N120C3

IXYS Corporation

IXYK120N120C3 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1500 W; Maximum Collector Current (IC): 240 A; Maximum Gate-Emitter Voltage: 20 V;

Median Price

$32.910

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 1 parts In-Stock

1+ parts

$6.570

100+ parts

$6.570

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$6.570

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1

$6.570

$6.570

$6.570

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Mouser Electronics

USA . 128 parts In-Stock

1+ parts

$32.910

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$23.000

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128

$32.910

$23.000

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DigiKey

USA . 199 parts In-Stock

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$34.740

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$22.700

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199

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$22.700

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Element14

Singapore . 1 parts In-Stock

1+ parts

$50.230

100+ parts

$35.250

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$34.550

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Verical

USA . 319 parts In-Stock

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Farnell

UK . 1 parts In-Stock

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$16.870

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Distributors (In-Stock)

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TME

Poland . 329 parts In-Stock

1+ parts

$31.060

100+ parts

$24.780

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Chip Stock

USA . 145 parts In-Stock

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145

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Nova Conductors

Japan . 50 parts In-Stock

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Distributors (Availability)

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Continental Prestige Electronics

USA . 15 parts In-Stock

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$15.170

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$15.170

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Ampacity Inc.

Singapore . 61 parts In-Stock

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$17.580

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Microchip USA

USA . 5,867 parts In-Stock

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$63.940

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5,867

$63.940

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Argo Parts USA

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Perfect Parts

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63

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Aranea Global

USA . 50 parts In-Stock

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50

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXYK120N120C3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

346 ns

Nominal Turn On Time (ton):

105 ns

Trade Compliance

IXYK120N120C3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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