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IXYK100N65B3D1

Littelfuse

IXYK100N65B3D1 by Littelfuse

The Littelfuse IXYK100N65B3D1 is an N-CHANNEL IGBT with 650V VCEsat, 225A IC, and 830W power dissipation. Ideal for power control applications, it features a built-in diode, 358ns turn-off time, and operates b/w -55°C to 175°C.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

1

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 700 parts In-Stock

1+ parts

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10k+ parts

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700

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,214 parts In-Stock

1+ parts

$23.050

100+ parts

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1k+ parts

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1,214

$23.050

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Microchip USA

USA . 3,273 parts In-Stock

1+ parts

$40.116

100+ parts

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1k+ parts

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10k+ parts

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3,273

$40.116

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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1,000

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Aranea Global

USA . 100 parts In-Stock

1+ parts

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100

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Overview

For high-quality power control applications, look no further than the IXYK100N65B3D1 by Littelfuse. With a single configuration and built-in diode, this N-channel insulated gate bipolar transistor (IGBT) offers exceptional performance and reliability. Ideal for a range of power control tasks, this product boasts a maximum collector-emitter voltage of 650V and a maximum operating temperature of 175°C. Trust Littelfuse's expertise in semiconductor technology to deliver a superior product that meets your needs efficiently and effectively. Upgrade your power control systems with the IXYK100N65B3D1 for unparalleled performance and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the components inside, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have better performance and efficiency compared to P-channel IGBTs, making this product a good choice for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and improves efficiency by eliminating the need for an external diode.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance and reliability in such scenarios.

Maximum VCEsat: 1.85 V

Low VCEsat value indicates minimal voltage drop across the collector-emitter junction, leading to higher efficiency and reduced power losses.

Package Shape: RECTANGULAR

Rectangular shape allows for easy and secure mounting on circuit boards, ensuring stability and reliability in operation.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a strong mechanical connection, making it easier to solder and ensuring good contact with the circuit board.

Nominal Turn Off Time (toff): 358 ns

Fast turn-off time allows for efficient switching and control of power, essential for high-performance power control applications.

No. of Terminals: 3

Simplified design with fewer terminals reduces complexity and potential points of failure in the circuit.

Maximum Power Dissipation (Abs): 830 W

High power dissipation capability allows this IGBT to handle large amounts of power efficiently, making it suitable for high-power applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides easy and secure mounting, ensuring stability and reliability in operation.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range allows for operation in demanding environments without compromising performance.

Maximum Collector-Emitter Voltage: 650 V

High maximum collector-emitter voltage rating allows for the handling of high voltage levels, making it suitable for various power control applications.

Transistor Element Material: SILICON

Silicon material provides good performance and reliability characteristics, ensuring stable and consistent operation over time.

Maximum Gate-Emitter Voltage: 20 V

High maximum gate-emitter voltage rating allows for reliable and safe operation, preventing damage due to overvoltage conditions.

Minimum Operating Temperature: -55 °C

Wide operating temperature range allows for operation in harsh environmental conditions without impacting performance.

Maximum Collector Current (IC): 225 A

High maximum collector current rating allows for handling large currents, making it suitable for high-power applications.

Maximum Gate-Emitter Threshold Voltage: 6 V

Low gate-emitter threshold voltage ensures efficient control and switching of the IGBT, improving overall performance and efficiency.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and installation, reducing complexity and potential points of failure.

Case Connection: COLLECTOR

Collector case connection allows for efficient heat dissipation, ensuring optimal performance and reliability under heavy load conditions.

Nominal Turn On Time (ton): 65 ns

Fast turn-on time enables quick response and control, essential for high-speed power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXYK100N65B3D1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

358 ns

Nominal Turn On Time (ton):

65 ns

Maximum VCEsat:

1.85 V

Trade Compliance

IXYK100N65B3D1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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